Part Details for JANSG2N7262 by Infineon Technologies AG
Overview of JANSG2N7262 by Infineon Technologies AG
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (8 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for JANSG2N7262
JANSG2N7262 CAD Models
JANSG2N7262 Part Data Attributes
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JANSG2N7262
Infineon Technologies AG
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Datasheet
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JANSG2N7262
Infineon Technologies AG
Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
Package Description | CYLINDRICAL, O-MBCY-W3 | |
Reach Compliance Code | compliant | |
ECCN Code | 3A001.A.1.A | |
Additional Feature | RADIATION HARDENED | |
Avalanche Energy Rating (Eas) | 240 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 5.5 A | |
Drain-source On Resistance-Max | 0.36 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-39 | |
JESD-30 Code | O-MBCY-W3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | METAL | |
Package Shape | ROUND | |
Package Style | CYLINDRICAL | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 22 A | |
Qualification Status | Qualified | |
Reference Standard | MIL-19500/601 | |
Surface Mount | NO | |
Terminal Finish | Tin/Lead (Sn/Pb) | |
Terminal Form | WIRE | |
Terminal Position | BOTTOM | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for JANSG2N7262
This table gives cross-reference parts and alternative options found for JANSG2N7262. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSG2N7262, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRHF8230 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN | International Rectifier | JANSG2N7262 vs IRHF8230 |
IRHF7230PBF | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN | International Rectifier | JANSG2N7262 vs IRHF7230PBF |
IRHF7230 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN | Infineon Technologies AG | JANSG2N7262 vs IRHF7230 |
2N7262 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | International Rectifier | JANSG2N7262 vs 2N7262 |
JANKCAH2N7262 | Power Field-Effect Transistor, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 | Infineon Technologies AG | JANSG2N7262 vs JANKCAH2N7262 |
2N7262 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN | Microsemi Corporation | JANSG2N7262 vs 2N7262 |
JANSH2N7262 | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 | International Rectifier | JANSG2N7262 vs JANSH2N7262 |
IRHF7230PBF | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN | Infineon Technologies AG | JANSG2N7262 vs IRHF7230PBF |