Datasheets
JANSG2N7262 by:

Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN

Part Details for JANSG2N7262 by Infineon Technologies AG

Overview of JANSG2N7262 by Infineon Technologies AG

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Part Details for JANSG2N7262

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JANSG2N7262 Part Data Attributes

JANSG2N7262 Infineon Technologies AG
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JANSG2N7262 Infineon Technologies AG Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description CYLINDRICAL, O-MBCY-W3
Reach Compliance Code compliant
ECCN Code 3A001.A.1.A
Additional Feature RADIATION HARDENED
Avalanche Energy Rating (Eas) 240 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 5.5 A
Drain-source On Resistance-Max 0.36 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-39
JESD-30 Code O-MBCY-W3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material METAL
Package Shape ROUND
Package Style CYLINDRICAL
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Qualified
Reference Standard MIL-19500/601
Surface Mount NO
Terminal Finish Tin/Lead (Sn/Pb)
Terminal Form WIRE
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for JANSG2N7262

This table gives cross-reference parts and alternative options found for JANSG2N7262. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JANSG2N7262, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IRHF8230 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN International Rectifier JANSG2N7262 vs IRHF8230
IRHF7230PBF Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN International Rectifier JANSG2N7262 vs IRHF7230PBF
IRHF7230 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN Infineon Technologies AG JANSG2N7262 vs IRHF7230
2N7262 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier JANSG2N7262 vs 2N7262
JANKCAH2N7262 Power Field-Effect Transistor, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Infineon Technologies AG JANSG2N7262 vs JANKCAH2N7262
2N7262 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN Microsemi Corporation JANSG2N7262 vs 2N7262
JANSH2N7262 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 International Rectifier JANSG2N7262 vs JANSH2N7262
IRHF7230PBF Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN Infineon Technologies AG JANSG2N7262 vs IRHF7230PBF
Part Number Description Manufacturer Compare
JANSH2N7262 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 International Rectifier JANSG2N7262 vs JANSH2N7262
2N7262 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF International Rectifier JANSG2N7262 vs 2N7262
2N7262 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, MODIFIED TO-39, 3 PIN Microsemi Corporation JANSG2N7262 vs 2N7262
IRHF7230PBF Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN International Rectifier JANSG2N7262 vs IRHF7230PBF
IRHF8230 Power Field-Effect Transistor, 5.5A I(D), 200V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED, TO-205AF, 3 PIN International Rectifier JANSG2N7262 vs IRHF8230
JANKCAH2N7262 Power Field-Effect Transistor, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 Infineon Technologies AG JANSG2N7262 vs JANKCAH2N7262

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