Part Details for JANSF2N7426 by International Rectifier
Results Overview of JANSF2N7426 by International Rectifier
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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JANSF2N7426 Information
JANSF2N7426 by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JANSF2N7426
Part # | Distributor | Description | Stock | Price | Buy | |
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Vyrian | Transistors | 516 |
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RFQ |
Part Details for JANSF2N7426
JANSF2N7426 CAD Models
JANSF2N7426 Part Data Attributes
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JANSF2N7426
International Rectifier
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Datasheet
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JANSF2N7426
International Rectifier
Power Field-Effect Transistor, 27A I(D), 200V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERNATIONAL RECTIFIER CORP | |
Reach Compliance Code | compliant | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 200 V | |
Drain Current-Max (ID) | 27 A | |
Drain-source On Resistance-Max | 0.16 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-254AA | |
JESD-30 Code | S-CSFM-P3 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | SQUARE | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 3 W | |
Pulsed Drain Current-Max (IDM) | 108 A | |
Qualification Status | Not Qualified | |
Reference Standard | MIL-19500/660 | |
Surface Mount | NO | |
Terminal Finish | TIN LEAD | |
Terminal Form | PIN/PEG | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |