Datasheets
JANS2N7236U by:
International Rectifier
Infineon Technologies AG
International Rectifier
Not Found

Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN

Part Details for JANS2N7236U by International Rectifier

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Applications Consumer Electronics Audio and Video Systems

JANS2N7236U Information

JANS2N7236U by International Rectifier is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for JANS2N7236U

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JANS2N7236U Part Data Attributes

JANS2N7236U International Rectifier
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JANS2N7236U International Rectifier Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN
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Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Package Description HERMETIC SEALED, SMD1, 3 PIN
Reach Compliance Code compliant
Additional Feature HIGH RELIABILITY
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 18 A
Drain-source On Resistance-Max 0.22 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-CBCC-N3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 125 W
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Reference Standard MIL-19500/595
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form NO LEAD
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 150 ns
Turn-on Time-Max (ton) 120 ns