Datasheets
JAN2N7236U by:

Power Field-Effect Transistor, 18A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, TO-267AB, 3 PIN

Part Details for JAN2N7236U by International Rectifier

Overview of JAN2N7236U by International Rectifier

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Part Details for JAN2N7236U

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JAN2N7236U Part Data Attributes

JAN2N7236U International Rectifier
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JAN2N7236U International Rectifier Power Field-Effect Transistor, 18A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, TO-267AB, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer INTERNATIONAL RECTIFIER CORP
Part Package Code TO-267AB
Package Description TO-267AB, 3 PIN
Pin Count 3
Reach Compliance Code unknown
ECCN Code EAR99
Avalanche Energy Rating (Eas) 500 mJ
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 18 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-267AB
JESD-30 Code R-CBCC-N3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style CHIP CARRIER
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 125 W
Pulsed Drain Current-Max (IDM) 72 A
Qualification Status Not Qualified
Reference Standard MIL-19500/595F
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form NO LEAD
Terminal Position BOTTOM
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for JAN2N7236U

This table gives cross-reference parts and alternative options found for JAN2N7236U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN2N7236U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
JAN2N7236U Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, SMD-1, U-PKG-3 Microsemi Corporation JAN2N7236U vs JAN2N7236U
JANS2N7236U Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN Infineon Technologies AG JAN2N7236U vs JANS2N7236U
JANTXV2N7236U Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, SMD-1, U-PKG-3 Microsemi Corporation JAN2N7236U vs JANTXV2N7236U
2N7236U Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, SMD-1, U-PKG-3 Microsemi Corporation JAN2N7236U vs 2N7236U
Part Number Description Manufacturer Compare
JANHCA2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DIE-3 International Rectifier JAN2N7236U vs JANHCA2N7236
2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN Sensitron Semiconductors JAN2N7236U vs 2N7236
IRFM9140 Power Field-Effect Transistor, 18A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors JAN2N7236U vs IRFM9140
JANS2N7236U Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, SMD1, 3 PIN Infineon Technologies AG JAN2N7236U vs JANS2N7236U
JAN2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, CERAMIC PACKAGE-3 Microsemi Corporation JAN2N7236U vs JAN2N7236
JANTXV2N7236U Power Field-Effect Transistor, 18A I(D), 100V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-267AB, TO-267AB, 3 PIN Defense Logistics Agency JAN2N7236U vs JANTXV2N7236U
IRFM9140PBF Power Field-Effect Transistor, 18A I(D), 100V, 0.22ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, HERMETIC SEALED PACKAGE-3 International Rectifier JAN2N7236U vs IRFM9140PBF
IRFM9140 18A, 100V, 0.2ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA, TO-254, 3 PIN TT Electronics Power and Hybrid / Semelab Limited JAN2N7236U vs IRFM9140
IRFM9140R1 Power Field-Effect Transistor, 18A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, TO-254, 3 PIN TT Electronics Resistors JAN2N7236U vs IRFM9140R1
2N7236 Power Field-Effect Transistor, 18A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA, International Rectifier JAN2N7236U vs 2N7236

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