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Transistors Power Bipolar Transistors JAN2N6989

JAN2N6989
Description: Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, DIP-14

Overview of JAN2N6989 by Defense Logistics Agency

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Part Data Attributes for JAN2N6989 by Defense Logistics Agency
Parametric Data

JAN2N6989
Defense Logistics Agency
Buy Now
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
DEFENSE LOGISTICS AGENCY
Package Description
DIP-14
Reach Compliance Code
unknown
ECCN Code
EAR99
Collector Current-Max (IC)
0.8 A
Collector-Emitter Voltage-Max
50 V
Configuration
SEPARATE, 4 ELEMENTS
DC Current Gain-Min (hFE)
100
JESD-30 Code
R-PDIP-T14
Number of Elements
4
Number of Terminals
14
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
IN-LINE
Polarity/Channel Type
NPN
Qualification Status
Qualified
Reference Standard
MIL-19500/559F
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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  1. JAN2N6989
    Defense Logistics Agency
    Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, DIP-14
    VS

Alternate Parts for JAN2N6989

This table gives cross-reference parts and alternative options found for JAN2N6989. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN2N6989, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
JANTX2N6989 Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, DIP-14 Defense Logistics Agency JAN2N6989 vs JANTX2N6989
Part Number Description Manufacturer Compare
JANTXV2N6989 Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, DIP-14 Defense Logistics Agency JAN2N6989 vs JANTXV2N6989
JAN2N6989 Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, Plastic/Epoxy, 14 Pin, DIP-14 Microsemi Corporation JAN2N6989 vs JAN2N6989
2N6989 Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, TO-116 Microchip Technology Inc JAN2N6989 vs 2N6989
JANS2N6989 Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Ceramic, Glass-Sealed, 14 Pin, HERMETIC SEALED, CERDIP-14 Microsemi Corporation JAN2N6989 vs JANS2N6989
JANTX2N6989 Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, Plastic/Epoxy, 14 Pin Microchip Technology Inc JAN2N6989 vs JANTX2N6989
2N6989 Power Bipolar Transistor, 4-Element, Silicon, Plastic/Epoxy, 14 Pin Silicon Transistor Corporation JAN2N6989 vs 2N6989
JANTX2N6989 Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, DIP-14 CRYSTALONICS Inc JAN2N6989 vs JANTX2N6989
JANTX2N6989 Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, DIP-14 Defense Logistics Agency JAN2N6989 vs JANTX2N6989
JANS2N6989 Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 14 Pin, DIP-14 New England Semiconductor JAN2N6989 vs JANS2N6989
JANTXV2N6989 Power Bipolar Transistor, 0.8A I(C), 50V V(BR)CEO, 4-Element, NPN, Silicon, TO-116, Plastic/Epoxy, 14 Pin, DIP-14 Microsemi Corporation JAN2N6989 vs JANTXV2N6989

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