Datasheets
JAN2N6901 by:
Microsemi Corporation
Defense Logistics Agency
International Rectifier
Intersil Corporation
Microsemi Corporation
Not Found

Small Signal Field-Effect Transistor, 1.69A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN

Part Details for JAN2N6901 by Microsemi Corporation

Results Overview of JAN2N6901 by Microsemi Corporation

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JAN2N6901 Information

JAN2N6901 by Microsemi Corporation is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for JAN2N6901

Part # Distributor Description Stock Price Buy
Vyrian Transistors 589
RFQ

Part Details for JAN2N6901

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JAN2N6901 Part Data Attributes

JAN2N6901 Microsemi Corporation
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JAN2N6901 Microsemi Corporation Small Signal Field-Effect Transistor, 1.69A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN
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Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer MICROSEMI CORP
Part Package Code BCY
Package Description FORMERLY TO-39, 3 PIN
Pin Count 2
Reach Compliance Code unknown
ECCN Code EAR99

Alternate Parts for JAN2N6901

This table gives cross-reference parts and alternative options found for JAN2N6901. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN2N6901, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
JAN2N6901 International Rectifier Check for Price Small Signal Field-Effect Transistor, 1.69A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN JAN2N6901 vs JAN2N6901
JANTX2N6901 Microsemi Corporation Check for Price Small Signal Field-Effect Transistor, 1.69A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN JAN2N6901 vs JANTX2N6901
2N6901 International Rectifier Check for Price 2N6901 JAN2N6901 vs 2N6901
JANTXV2N6901 Intersil Corporation Check for Price 1690mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF JAN2N6901 vs JANTXV2N6901
JANTX2N6901 Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 1.69A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN JAN2N6901 vs JANTX2N6901
2N6901TX International Rectifier Check for Price Small Signal Field-Effect Transistor, 1.69A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF JAN2N6901 vs 2N6901TX
Part Number Manufacturer Composite Price Description Compare
JANTXV2N6901 Harris Semiconductor Check for Price Small Signal Field-Effect Transistor, 1.69A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF JAN2N6901 vs JANTXV2N6901
2N6901 Intersil Corporation Check for Price 1690mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-205AF JAN2N6901 vs 2N6901
2N6901 Harris Semiconductor Check for Price Small Signal Field-Effect Transistor, 1.69A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF JAN2N6901 vs 2N6901
SCVN2210N2 Supertex Inc Check for Price Small Signal Field-Effect Transistor, 1.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 JAN2N6901 vs SCVN2210N2
JANTXV2N6901 Defense Logistics Agency Check for Price Small Signal Field-Effect Transistor, 1.69A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN JAN2N6901 vs JANTXV2N6901
SFF6661/39TX Solid State Devices Inc (SSDI) Check for Price Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED PACKAGE-3 JAN2N6901 vs SFF6661/39TX
SJVN2210N2 Supertex Inc Check for Price Small Signal Field-Effect Transistor, 1.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 JAN2N6901 vs SJVN2210N2
SXVVN2210N2 Supertex Inc Check for Price Small Signal Field-Effect Transistor, 1.7A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39 JAN2N6901 vs SXVVN2210N2
SFF6661/39TXV Solid State Devices Inc (SSDI) Check for Price Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-39, HERMETIC SEALED PACKAGE-3 JAN2N6901 vs SFF6661/39TXV
JANTX2N6901 Defense Logistics Agency Check for Price Small Signal Field-Effect Transistor, 1.69A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, FORMERLY TO-39, 3 PIN JAN2N6901 vs JANTX2N6901

JAN2N6901 Related Parts

JAN2N6901 Frequently Asked Questions (FAQ)

  • The recommended operating temperature range for the JAN2N6901 is -55°C to 150°C, although it can withstand storage temperatures from -65°C to 200°C.

  • To ensure proper biasing, the JAN2N6901 requires a minimum of 10V on the gate-to-source voltage (Vgs) and a maximum of 20V on the drain-to-source voltage (Vds). Additionally, the gate current (Ig) should be limited to 10mA.

  • The maximum power dissipation for the JAN2N6901 is 125W, but this can be increased to 250W with proper heat sinking and thermal management.

  • To protect the JAN2N6901 from ESD, handle the device with anti-static wrist straps, mats, or bags, and ensure that all equipment and tools are properly grounded. Avoid touching the device's pins or leads with bare hands.

  • Yes, the JAN2N6901 is suitable for switching power supply applications due to its high switching frequency capability (up to 1MHz) and low gate charge. However, ensure that the device is properly biased and heat-sunk to prevent overheating.