Part Details for JAN2N6301 by Microchip Technology Inc
Results Overview of JAN2N6301 by Microchip Technology Inc
- Distributor Offerings: (10 listings)
- Number of FFF Equivalents: (7 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
JAN2N6301 Information
JAN2N6301 by Microchip Technology Inc is a Power Bipolar Transistor.
Power Bipolar Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for JAN2N6301
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
32AJ5797
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Newark | 80V 8A 75W Npn Power Bjt Tht To-66 Rohs Compliant: Yes |Microchip JAN2N6301 RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$28.1000 / $29.2200 | Buy Now |
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DISTI #
JAN2N6301-ND
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DigiKey | TRANS NPN DARL 80V 8A TO66 Min Qty: 100 Lead time: 36 Weeks Container: Bulk | Temporarily Out of Stock |
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$29.2202 | Buy Now |
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DISTI #
JAN2N6301
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Avnet Americas | Transistor Darlington PNP 80V 8A 2-Pin TO-66 Tray - Bulk (Alt: JAN2N6301) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 36 Weeks, 0 Days Container: Bulk | 0 |
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$26.5039 / $28.3023 | Buy Now |
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DISTI #
V37:1799_09132872
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Arrow Electronics | Trans Darlington NPN 80V 8A 75000mW 3-Pin(2+Tab) TO-66 Tray RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Lead time: 36 Weeks Date Code: 1642 | Americas - 2595 |
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$6.5570 / $26.9243 | Buy Now |
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DISTI #
JAN2N6301
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Microchip Technology Inc | Power BJT _ TO-66, Projected EOL: 2049-02-05 ECCN: EAR99 Lead time: 36 Weeks, 0 Days |
0 Alternates Available |
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$31.4700 | Buy Now |
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Onlinecomponents.com | RoHS: Compliant | 0 |
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$27.9100 / $58.4500 | Buy Now |
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DISTI #
25919578
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Verical | Trans Darlington NPN 80V 8A 75000mW 3-Pin(2+Tab) TO-66 Tray RoHS: Not Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1642 | Americas - 2595 |
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$6.5570 | Buy Now |
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NAC | Power BJT RoHS: Compliant Min Qty: 11 Package Multiple: 1 Container: Tray | 0 |
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$27.4100 / $32.1100 | Buy Now |
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NexGen Digital | 40 |
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RFQ | ||
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Master Electronics | RoHS: Compliant | 0 |
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$27.9100 / $58.4500 | Buy Now |
Part Details for JAN2N6301
JAN2N6301 CAD Models
JAN2N6301 Part Data Attributes
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JAN2N6301
Microchip Technology Inc
Buy Now
Datasheet
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Compare Parts:
JAN2N6301
Microchip Technology Inc
Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin
Select a part to compare: |
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | MICROCHIP TECHNOLOGY INC | |
| Package Description | TO-66, 2 PIN | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 36 Weeks | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 8 A | |
| Collector-Emitter Voltage-Max | 80 V | |
| Configuration | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR | |
| DC Current Gain-Min (hFE) | 100 | |
| JEDEC-95 Code | TO-213AA | |
| JESD-30 Code | O-MBFM-P2 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 200 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | NPN | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500/539 | |
| Surface Mount | NO | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | PIN/PEG | |
| Terminal Position | BOTTOM | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Transition Frequency-Nom (fT) | 4 MHz |
Alternate Parts for JAN2N6301
This table gives cross-reference parts and alternative options found for JAN2N6301. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN2N6301, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| JAN2N6301 | Motorola Mobility LLC | Check for Price | 8A, 80V, NPN, Si, POWER TRANSISTOR | JAN2N6301 vs JAN2N6301 |
| 2N6301E3 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 8A I(C), NPN | JAN2N6301 vs 2N6301E3 |
| 2N6301-JQR-BR1 | TT Electronics Resistors | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN | JAN2N6301 vs 2N6301-JQR-BR1 |
| 2N6301 | Microsemi Corporation | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN | JAN2N6301 vs 2N6301 |
| 2N6301-JQR | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 8A, 80V, NPN, Si, POWER TRANSISTOR, TO-213AA, TO-66, 2 PIN | JAN2N6301 vs 2N6301-JQR |
| 2N6301-JQR-BR1 | TT Electronics Power and Hybrid / Semelab Limited | Check for Price | 8A, 80V, NPN, Si, POWER TRANSISTOR, TO-213AA, TO-66, 2 PIN | JAN2N6301 vs 2N6301-JQR-BR1 |
| 2N6301.MOD | TT Electronics Resistors | Check for Price | Power Bipolar Transistor, 8A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-213AA, Metal, 2 Pin, TO-66, 2 PIN | JAN2N6301 vs 2N6301.MOD |
JAN2N6301 Frequently Asked Questions (FAQ)
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The recommended operating temperature range for the JAN2N6301 is -55°C to +150°C, although it can withstand storage temperatures from -65°C to +200°C.
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To ensure proper biasing, the JAN2N6301 requires a minimum of 10V on the collector-emitter voltage (VCE) and a base-emitter voltage (VBE) between 0.65V and 0.85V. Additionally, the base current (IB) should be limited to 5mA to prevent overheating.
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The maximum power dissipation for the JAN2N6301 is 20W, assuming a case temperature (TC) of 25°C. However, this value can be derated for higher temperatures, and the device should be mounted on a suitable heat sink to ensure reliable operation.
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Yes, the JAN2N6301 can be used in switching applications, but it's essential to ensure that the device is properly biased and that the switching frequency is within the recommended range (typically up to 100 kHz). Additionally, the device should be protected from voltage spikes and ringing using suitable snubbers or clamp circuits.
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To prevent electrostatic discharge (ESD) damage, handle the JAN2N6301 with proper ESD protection equipment, such as wrist straps, mats, and bags. Ensure that the device is stored in a static-safe environment, and avoid touching the pins or leads during handling.