Part Details for JAN2N5667 by VPT Components
Overview of JAN2N5667 by VPT Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Industrial Automation
Audio and Video Systems
Price & Stock for JAN2N5667
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JAN2N5667
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Avnet Americas | Trans GP BJT NPN 300V 5A 3-Pin TO-5 Bag - Bulk (Alt: JAN2N5667) Min Qty: 94 Package Multiple: 1 Container: Bulk | 0 |
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$13.7088 / $15.2082 | Buy Now |
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DISTI #
JAN2N5667
|
TTI | Bipolar Transistors - BJT MIL-PRF-19500/455 Min Qty: 50 Package Multiple: 1 Container: Bulk | Americas - 0 |
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$14.8800 | Buy Now |
Part Details for JAN2N5667
JAN2N5667 CAD Models
JAN2N5667 Part Data Attributes
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JAN2N5667
VPT Components
Buy Now
Datasheet
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JAN2N5667
VPT Components
Power Bipolar Transistor,
|
| Rohs Code | No | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VPT COMPONENTS | |
| Package Description | TO-5, 3 PIN | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Date Of Intro | 2020-02-13 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 5 A | |
| Collector-Base Capacitance-Max | 120 pF | |
| Collector-Emitter Voltage-Max | 300 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 10 | |
| JEDEC-95 Code | TO-39 | |
| JESD-30 Code | O-MBCY-W3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | METAL | |
| Package Shape | ROUND | |
| Package Style | CYLINDRICAL | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 1.2 W | |
| Power Dissipation-Max (Abs) | 15 W | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500 | |
| Surface Mount | NO | |
| Terminal Form | WIRE | |
| Terminal Position | BOTTOM | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 2000 ns | |
| Turn-on Time-Max (ton) | 250 ns | |
| VCEsat-Max | 1 V |