Part Details for JAN2N3227UA by VPT Components
Overview of JAN2N3227UA by VPT Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for JAN2N3227UA
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
JAN2N3227UA
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Avnet Americas | High-Speed Switching Transistor NPN 20V 4-Pin Surface Mount - Bulk (Alt: JAN2N3227UA) Min Qty: 27 Package Multiple: 1 Container: Bulk | 0 |
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$48.5184 / $53.8251 | Buy Now |
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DISTI #
JAN2N3227UA
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TTI | Bipolar Transistors - BJT MIL-PRF-19500/317 Min Qty: 15 Package Multiple: 1 Container: Bulk | Americas - 0 |
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$52.6500 | Buy Now |
Part Details for JAN2N3227UA
JAN2N3227UA CAD Models
JAN2N3227UA Part Data Attributes
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JAN2N3227UA
VPT Components
Buy Now
Datasheet
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JAN2N3227UA
VPT Components
Small Signal Bipolar Transistor,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VPT COMPONENTS | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Additional Feature | HIGH RELIABILITY | |
| Collector-Base Capacitance-Max | 4 pF | |
| Collector-Emitter Voltage-Max | 20 V | |
| Configuration | SINGLE | |
| DC Current Gain-Min (hFE) | 30 | |
| JESD-30 Code | R-CDSO-N4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Temperature-Max | 200 °C | |
| Operating Temperature-Min | -65 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | NPN | |
| Power Dissipation Ambient-Max | 0.36 W | |
| Power Dissipation-Max (Abs) | 0.36 W | |
| Qualification Status | Qualified | |
| Reference Standard | MIL-19500 | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 25 ns | |
| Turn-on Time-Max (ton) | 12 ns | |
| VCEsat-Max | 0.45 V |