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JAN1N6120US by:

Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon

Part Details for JAN1N6120US by Microchip Technology Inc

Overview of JAN1N6120US by Microchip Technology Inc

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Price & Stock for JAN1N6120US

Part # Distributor Description Stock Price Buy
DISTI # 35AJ7099
Newark 53.6 V Bi-Directional Tvs B-Body Sq. Melf Rohs Compliant: Yes |Microchip JAN1N6120US RoHS: Compliant Min Qty: 100 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $12.6100
  • 500 $12.1300
$12.1300 / $12.6100 Buy Now
DISTI # 1086-19472-ND
DigiKey TVS DIODE 29.7VWM 56.28V SQ-MELF Min Qty: 100 Lead time: 25 Weeks Container: Bulk Temporarily Out of Stock
  • 100 $12.6100
$12.6100 Buy Now
DISTI # JAN1N6120US
Avnet Americas Voidless Hermetically Sealed Bi-Directional Transient Voltage Suppressor 16.25V 500W 2-Pin MELF Surface Mount - Bulk (Alt: JAN1N6120US) RoHS: Not Compliant Min Qty: 100 Package Multiple: 1 Lead time: 25 Weeks, 0 Days Container: Bulk 0
  • 1 $13.5800
  • 100 $12.6100
  • 500 $12.1300
$12.1300 / $13.5800 Buy Now
DISTI # 494-JAN1N6120US
Mouser Electronics ESD Protection Diodes / TVS Diodes 53.6 V Bi-Directional TVS RoHS: Not Compliant 0
  • 100 $12.6100
$12.6100 Order Now
DISTI # JAN1N6120US
Microchip Technology Inc Bi-Directional TVS _ B-Body Sq. Melf, Projected EOL: 2049-02-05 RoHS: Compliant pbFree: Yes 0

Alternates Available
  • 1 $13.5800
$13.5800 Buy Now
Onlinecomponents.com   RoHS: Compliant 0
  • 25 $19.4000
  • 50 $14.5500
  • 75 $13.5800
  • 100 $13.3100
$13.3100 / $19.4000 Buy Now
NAC Hi Rel TVS RoHS: Compliant Min Qty: 25 Package Multiple: 1 0
  • 1 $14.2600
  • 100 $12.9300
  • 500 $12.1200
  • 1,000 $11.8300
$11.8300 / $14.2600 Buy Now
Master Electronics   RoHS: Compliant 0
  • 25 $19.4000
  • 50 $14.5500
  • 75 $13.5800
  • 100 $13.3100
$13.3100 / $19.4000 Buy Now

Part Details for JAN1N6120US

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JAN1N6120US Part Data Attributes

JAN1N6120US Microchip Technology Inc
Buy Now Datasheet
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JAN1N6120US Microchip Technology Inc Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon
Rohs Code No
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description MELF-2
Reach Compliance Code compliant
Additional Feature HIGH RELIABILITY
Breakdown Voltage-Min 37.1 V
Clamping Voltage-Max 56.3 V
Configuration SINGLE
Diode Element Material SILICON
Diode Type TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 Code O-LELF-R2
JESD-609 Code e0
Non-rep Peak Rev Power Dis-Max 500 W
Number of Elements 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material GLASS
Package Shape ROUND
Package Style LONG FORM
Polarity BIDIRECTIONAL
Power Dissipation-Max 2 W
Qualification Status Qualified
Reference Standard MIL-19500
Rep Pk Reverse Voltage-Max 29.7 V
Reverse Current-Max 1 µA
Reverse Test Voltage 29.7 V
Surface Mount YES
Technology AVALANCHE
Terminal Finish TIN LEAD
Terminal Form WRAP AROUND
Terminal Position END

Alternate Parts for JAN1N6120US

This table gives cross-reference parts and alternative options found for JAN1N6120US. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of JAN1N6120US, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
JANTX1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 Micross Components JAN1N6120US vs JANTX1N6120US
JAN1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JAN1N6120US vs JAN1N6120US
1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6120US vs 1N6120US
1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JAN1N6120US vs 1N6120US
JANS1N6120US Trans Voltage Suppressor Diode, 500W, 30V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JAN1N6120US vs JANS1N6120US
JANTXV1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6120US vs JANTXV1N6120US
Part Number Description Manufacturer Compare
JANTX1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Unidirectional, 1 Element, Silicon, HERMETIC SEALED, SURFACE MOUNT PACKAGE-2 Micross Components JAN1N6120US vs JANTX1N6120US
JAN1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JAN1N6120US vs JAN1N6120US
1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6120US vs 1N6120US
JANS1N6120US Trans Voltage Suppressor Diode, 500W, 30V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JAN1N6120US vs JANS1N6120US
JANTXV1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6120US vs JANTXV1N6120US
1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon, Bkc Semiconductors Inc JAN1N6120US vs 1N6120US
JANTX1N6120US Trans Voltage Suppressor Diode, 500W, 29.7V V(RWM), Bidirectional, 1 Element, Silicon Microchip Technology Inc JAN1N6120US vs JANTX1N6120US

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