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Overview of JAN1N6071A by New England Semiconductor
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 0 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Consumer Electronics
Energy and Power Systems
Electronic Manufacturing
Renewable Energy
Automotive
CAD Models for JAN1N6071A by New England Semiconductor
Part Data Attributes for JAN1N6071A by New England Semiconductor
|
|
|
|---|---|
|
Part Life Cycle Code
|
Transferred
|
|
Ihs Manufacturer
|
NEW ENGLAND SEMICONDUCTOR
|
|
Reach Compliance Code
|
unknown
|
|
Breakdown Voltage-Max
|
210 V
|
|
Breakdown Voltage-Min
|
190 V
|
|
Case Connection
|
ISOLATED
|
|
Configuration
|
SINGLE
|
|
Diode Element Material
|
SILICON
|
|
Diode Type
|
TRANS VOLTAGE SUPPRESSOR DIODE
|
|
JEDEC-95 Code
|
DO-13
|
|
JESD-30 Code
|
O-MALF-W2
|
|
Non-rep Peak Rev Power Dis-Max
|
1500 W
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
2
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Package Body Material
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METAL
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|
Package Shape
|
ROUND
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Package Style
|
LONG FORM
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|
Polarity
|
BIDIRECTIONAL
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|
Power Dissipation-Max
|
1 W
|
|
Qualification Status
|
Not Qualified
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|
Reference Standard
|
MIL-19500/500
|
|
Rep Pk Reverse Voltage-Max
|
170 V
|
|
Surface Mount
|
NO
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|
Technology
|
AVALANCHE
|
|
Terminal Form
|
WIRE
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|
Terminal Position
|
AXIAL
|
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