Part Details for JAN1N5187/TR by Microsemi Corporation
Overview of JAN1N5187/TR by Microsemi Corporation
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Applications
Consumer Electronics
Energy and Power Systems
Electronic Manufacturing
Renewable Energy
Automotive
Part Details for JAN1N5187/TR
JAN1N5187/TR CAD Models
JAN1N5187/TR Part Data Attributes
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JAN1N5187/TR
Microsemi Corporation
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Datasheet
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JAN1N5187/TR
Microsemi Corporation
Rectifier Diode,
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | MICROSEMI CORP | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Samacsys Manufacturer | Microsemi Corporation | |
Additional Feature | HIGH RELIABILITY | |
Application | FAST RECOVERY | |
Breakdown Voltage-Min | 240 V | |
Case Connection | ISOLATED | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 1.5 V | |
JESD-30 Code | O-LALF-W2 | |
Non-rep Pk Forward Current-Max | 80 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -65 °C | |
Output Current-Max | 3 A | |
Package Body Material | GLASS | |
Package Shape | ROUND | |
Package Style | LONG FORM | |
Reference Standard | MIL-PRF-19500 | |
Rep Pk Reverse Voltage-Max | 200 V | |
Reverse Current-Max | 2 µA | |
Reverse Recovery Time-Max | 0.2 µs | |
Reverse Test Voltage | 200 V | |
Surface Mount | NO | |
Terminal Form | WIRE | |
Terminal Position | AXIAL |