Part Details for IXYX140N90C3 by Littelfuse Inc
Overview of IXYX140N90C3 by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Electronic Manufacturing
Robotics and Drones
Price & Stock for IXYX140N90C3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH2127
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Newark | Igbt, 900V, 310A, 175Deg C, 1.63Kw, Continuous Collector Current:310A, Collector Emitter Saturation Voltage:2.15V, Power Dissipation:1.63Kw, Collector Emitter Voltage Max:900V, No. Of Pins:3Pins, Operating Temperature Max:175°C Rohs Compliant: Yes |Littelfuse IXYX140N90C3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 20 |
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$17.3300 / $26.1400 | Buy Now |
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DISTI #
29AK0510
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Newark | Transistor, Igbt, 900V, 310A, Plus247 Rohs Compliant: Yes |Littelfuse IXYX140N90C3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 0 |
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$17.3300 / $26.1400 | Buy Now |
Part Details for IXYX140N90C3
IXYX140N90C3 CAD Models
IXYX140N90C3 Part Data Attributes
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IXYX140N90C3
Littelfuse Inc
Buy Now
Datasheet
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IXYX140N90C3
Littelfuse Inc
Insulated Gate Bipolar Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 310 A | |
| Collector-Emitter Voltage-Max | 900 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 5.5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-PSIP-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1630 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 300 ns | |
| Turn-on Time-Nom (ton) | 122 ns | |
| VCEsat-Max | 2.7 V |