IXYT30N450HV
Description: Insulated Gate Bipolar Transistor,

Overview of IXYT30N450HV by Littelfuse Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 2 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Available )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IXYT30N450HV by Littelfuse Inc

Part # Manufacturer Description Stock Price Buy
DISTI # 29AK0509
Newark Transistor, 4.5Kv, 60A, To-268Hv Rohs Compliant: Yes |Littelfuse IXYT30N450HV RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 105
  • 1 $44.9100
  • 5 $43.0900
  • 10 $41.2800
  • 25 $39.4600
  • 50 $37.6400
$37.6400 / $44.9100 Buy Now
DISTI # 03AH2119
Newark Disc Igbt Xpt-Hi Voltage To-268Aa/Tube |Littelfuse IXYT30N450HV RoHS: Not Compliant Min Qty: 30 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 10 $38.1300
$38.1300 Buy Now

CAD Models for IXYT30N450HV by Littelfuse Inc
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Part Data Attributes for IXYT30N450HV by Littelfuse Inc

IXYT30N450HV
Littelfuse Inc
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
LITTELFUSE INC
Package Description
,
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
LITTELFUSE
Case Connection
COLLECTOR
Collector Current-Max (IC)
60 A
Collector-Emitter Voltage-Max
4500 V
Configuration
SINGLE
Gate-Emitter Thr Voltage-Max
5 V
Gate-Emitter Voltage-Max
20 V
JEDEC-95 Code
TO-268AA
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Terminals
2
Operating Temperature-Max
150 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
430 W
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
SINGLE
Transistor Application
POWER CONTROL
Transistor Element Material
SILICON
Turn-off Time-Nom (toff)
1545 ns
Turn-on Time-Nom (ton)
632 ns
VCEsat-Max
3.9 V
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    Littelfuse Inc
    Insulated Gate Bipolar Transistor,
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