Part Details for IXYH40N65C3D1 by IXYS Corporation
Overview of IXYH40N65C3D1 by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Renewable Energy
Price & Stock for IXYH40N65C3D1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXYH40N65C3D1
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Mouser Electronics | IGBTs Disc IGBT XPT-GenX3 TO-247AD RoHS: Compliant | 0 |
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$4.8500 / $5.7500 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 25 Weeks Container: Tube | 0Tube |
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$5.2200 | Buy Now |
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DISTI #
IXYH40N65C3D1
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TME | Transistor: IGBT, GenX3™, 650V, 40A, 300W, TO247-3 Min Qty: 1 | 0 |
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$5.6400 / $7.9000 | RFQ |
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New Advantage Corporation | IGBT DIS.DIODE SINGLE 40A 650V XPT TO247-3 RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 254 |
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$18.2500 / $19.5500 | Buy Now |
Part Details for IXYH40N65C3D1
IXYH40N65C3D1 CAD Models
IXYH40N65C3D1 Part Data Attributes
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IXYH40N65C3D1
IXYS Corporation
Buy Now
Datasheet
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IXYH40N65C3D1
IXYS Corporation
Insulated Gate Bipolar Transistor
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 80 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 160 ns | |
| Turn-on Time-Nom (ton) | 64 ns | |
| VCEsat-Max | 2.35 V |