Datasheets
IXYH24N170CV1 by:

Insulated Gate Bipolar Transistor,

Part Details for IXYH24N170CV1 by Littelfuse Inc

Overview of IXYH24N170CV1 by Littelfuse Inc

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for IXYH24N170CV1

Part # Distributor Description Stock Price Buy
DISTI # 03AH2035
Newark Disc Igbt Xpt-Hi Voltage To-247Ad/ Tube |Littelfuse IXYH24N170CV1 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $8.9000
  • 500 $8.2700
$8.2700 / $8.9000 Buy Now

Part Details for IXYH24N170CV1

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IXYH24N170CV1 Part Data Attributes

IXYH24N170CV1 Littelfuse Inc
Buy Now Datasheet
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IXYH24N170CV1 Littelfuse Inc Insulated Gate Bipolar Transistor,
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description ,
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Case Connection COLLECTOR
Collector Current-Max (IC) 58 A
Collector-Emitter Voltage-Max 1700 V
Configuration SINGLE WITH BUILT-IN DIODE
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 500 W
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 336 ns
Turn-on Time-Nom (ton) 47 ns
VCEsat-Max 4 V

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