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Part Details for IXYA20N65C3D1 by Littelfuse Inc
Overview of IXYA20N65C3D1 by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Industrial Automation
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Electronic Manufacturing
Automotive
Price & Stock for IXYA20N65C3D1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH2012
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Newark | Disc Igbt Xpt-Genx3 To-263D2/Tube |Littelfuse IXYA20N65C3D1 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for IXYA20N65C3D1
IXYA20N65C3D1 CAD Models
IXYA20N65C3D1 Part Data Attributes
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IXYA20N65C3D1
Littelfuse Inc
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Datasheet
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IXYA20N65C3D1
Littelfuse Inc
Insulated Gate Bipolar Transistor,
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Description | IGBT - 650 V 50 A 200 W Surface Mount TO-263AA | |
| Samacsys Manufacturer | LITTELFUSE | |
| Samacsys Modified On | 2023-12-01 06:28:04 | |
| Total Weight | 1452.5601 | |
| Category CO2 Kg | 8.4 | |
| CO2 | 12201.50484 | |
| Compliance Temperature Grade | Military: -55C to +175C | |
| EU RoHS Version | RoHS 2 (2015/863/EU) | |
| EU RoHS Exemptions | 7(a) | |
| Candidate List Date | 2024-01-23 | |
| SVHC Over MCV | 7439-92-1 | |
| CAS Accounted for Wt | 61 | |
| CA Prop 65 Presence | YES | |
| CA Prop 65 CAS Numbers | 1309-64-4, 7440-02-0, 7439-92-1 | |
| Conflict Mineral Status | DRC Conflict Free Undeterminable | |
| Conflict Mineral Status Source | CMRT V6.10 | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 50 A | |
| Collector-Emitter Voltage-Max | 650 V | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| Gate-Emitter Thr Voltage-Max | 6 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-263AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 200 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 132 ns | |
| Turn-on Time-Nom (ton) | 51 ns | |
| VCEsat-Max | 2.5 V |