Datasheets
IXXH110N65C4 by:

Insulated Gate Bipolar Transistor,

Part Details for IXXH110N65C4 by Littelfuse Inc

Overview of IXXH110N65C4 by Littelfuse Inc

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Part Details for IXXH110N65C4

IXXH110N65C4 CAD Models

IXXH110N65C4 Part Data Attributes

IXXH110N65C4 Littelfuse Inc
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IXXH110N65C4 Littelfuse Inc Insulated Gate Bipolar Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Case Connection COLLECTOR
Collector Current-Max (IC) 235 A
Collector-Emitter Voltage-Max 650 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 6.5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 880 W
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 160 ns
Turn-on Time-Nom (ton) 71 ns
VCEsat-Max 2.35 V

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