Part Details for IXUC100N055 by IXYS Corporation
Results Overview of IXUC100N055 by IXYS Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
IXUC100N055 Information
IXUC100N055 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for IXUC100N055
Part # | Distributor | Description | Stock | Price | Buy | |
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New Advantage Corporation | MOSFET DIS.100A 55V N-CH ISOPLUS220 TRENCH THT RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 232 |
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$7.0000 / $7.5000 | Buy Now |
Part Details for IXUC100N055
IXUC100N055 CAD Models
IXUC100N055 Part Data Attributes
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IXUC100N055
IXYS Corporation
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Datasheet
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IXUC100N055
IXYS Corporation
Power Field-Effect Transistor, 100A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, ISOPLUS 220, TO-273, 3 PIN
Select a part to compare: |
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-273AA | |
Package Description | ISOPLUS 220, TO-273, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 500 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 100 A | |
Drain-source On Resistance-Max | 0.0077 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-273AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXUC100N055
This table gives cross-reference parts and alternative options found for IXUC100N055. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXUC100N055, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
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IPB80N06S2LH5ATMA1 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | IXUC100N055 vs IPB80N06S2LH5ATMA1 |
IXFH68N20 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, | IXUC100N055 vs IXFH68N20 |
STW10NK80Z | STMicroelectronics | $2.0575 | N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package | IXUC100N055 vs STW10NK80Z |
IXFK60N55Q2 | Littelfuse Inc | Check for Price | Power Field-Effect Transistor, 60A I(D), 550V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN | IXUC100N055 vs IXFK60N55Q2 |
STW20NK70Z | STMicroelectronics | Check for Price | 20A, 700V, 0.285ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN | IXUC100N055 vs STW20NK70Z |
IRLSZ34 | Samsung Semiconductor | Check for Price | Power Field-Effect Transistor, 16A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXUC100N055 vs IRLSZ34 |
IPP45N06S4-09 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 45A I(D), 60V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | IXUC100N055 vs IPP45N06S4-09 |
2SK2464 | SANYO Electric Co Ltd | Check for Price | Power Field-Effect Transistor, 45A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 3 PIN | IXUC100N055 vs 2SK2464 |
SPP04N60C2 | Infineon Technologies AG | Check for Price | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXUC100N055 vs SPP04N60C2 |
SSH7N60B | Fairchild Semiconductor Corporation | Check for Price | Power Field-Effect Transistor, 7.3A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | IXUC100N055 vs SSH7N60B |