Datasheets
IXUC100N055 by:
IXYS Corporation
IXYS Corporation
Littelfuse Inc
Not Found

Power Field-Effect Transistor, 100A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, ISOPLUS 220, TO-273, 3 PIN

Part Details for IXUC100N055 by IXYS Corporation

Results Overview of IXUC100N055 by IXYS Corporation

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Automotive

IXUC100N055 Information

IXUC100N055 by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXUC100N055

Part # Distributor Description Stock Price Buy
New Advantage Corporation MOSFET DIS.100A 55V N-CH ISOPLUS220 TRENCH THT RoHS: Compliant Min Qty: 1 Package Multiple: 100 232
  • 100 $7.5000
  • 232 $7.0000
$7.0000 / $7.5000 Buy Now

Part Details for IXUC100N055

IXUC100N055 CAD Models

There are no models available for this part yet.

Sign in to request this CAD model.

Register or Sign In

IXUC100N055 Part Data Attributes

IXUC100N055 IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXUC100N055 IXYS Corporation Power Field-Effect Transistor, 100A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA, ISOPLUS 220, TO-273, 3 PIN
Select a part to compare:
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-273AA
Package Description ISOPLUS 220, TO-273, 3 PIN
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 500 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0077 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-273AA
JESD-30 Code R-PSIP-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXUC100N055

This table gives cross-reference parts and alternative options found for IXUC100N055. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXUC100N055, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IPB80N06S2LH5ATMA1 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN IXUC100N055 vs IPB80N06S2LH5ATMA1
IXFH68N20 Littelfuse Inc Check for Price Power Field-Effect Transistor, 68A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, IXUC100N055 vs IXFH68N20
STW10NK80Z STMicroelectronics $2.0575 N-channel 800 V, 0.78 Ohm, 9 A Zener-protected SuperMESH(TM) Power MOSFETs in TO-247 package IXUC100N055 vs STW10NK80Z
IXFK60N55Q2 Littelfuse Inc Check for Price Power Field-Effect Transistor, 60A I(D), 550V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN IXUC100N055 vs IXFK60N55Q2
STW20NK70Z STMicroelectronics Check for Price 20A, 700V, 0.285ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN IXUC100N055 vs STW20NK70Z
IRLSZ34 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 16A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IXUC100N055 vs IRLSZ34
IPP45N06S4-09 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 45A I(D), 60V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN IXUC100N055 vs IPP45N06S4-09
2SK2464 SANYO Electric Co Ltd Check for Price Power Field-Effect Transistor, 45A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ZP, 3 PIN IXUC100N055 vs 2SK2464
SPP04N60C2 Infineon Technologies AG Check for Price Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN IXUC100N055 vs SPP04N60C2
SSH7N60B Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 7.3A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IXUC100N055 vs SSH7N60B

IXUC100N055 Related Parts

IXUC100N055 Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the IXUC100N055 is -40°C to 150°C, with a junction temperature of up to 175°C.

  • Proper cooling can be achieved by using a heat sink with a thermal resistance of less than 1°C/W, and ensuring good thermal contact between the device and the heat sink. Additionally, the ambient temperature should be kept below 50°C.

  • The recommended gate drive voltage for the IXUC100N055 is between 10V and 15V, with a maximum gate drive current of 2A.

  • Yes, the IXUC100N055 can be used in parallel, but it is recommended to use a current sharing scheme to ensure equal current distribution between devices. Additionally, the gate drive circuitry should be designed to accommodate the increased gate capacitance.

  • The maximum dv/dt rating for the IXUC100N055 is 10kV/μs, which means the device can withstand a voltage change of up to 10kV in 1 microsecond.