Part Details for IXTY1R4N120P-TRL by IXYS Corporation
Overview of IXTY1R4N120P-TRL by IXYS Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for IXTY1R4N120P-TRL
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTY1R4N120P-TRL
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Mouser Electronics | MOSFETs IXTY1R4N120P TRL RoHS: Compliant | 0 |
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$1.9400 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 24 Weeks Container: Reel | 0Reel |
|
$2.1800 | Buy Now |
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DISTI #
IXTY1R4N120P-TRL
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TTI | MOSFETs IXTY1R4N120P TRL Min Qty: 2500 Package Multiple: 2500 Container: Reel | Americas - 0 |
|
$1.9200 | Buy Now |
Part Details for IXTY1R4N120P-TRL
IXTY1R4N120P-TRL CAD Models
IXTY1R4N120P-TRL Part Data Attributes
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IXTY1R4N120P-TRL
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTY1R4N120P-TRL
IXYS Corporation
Power Field-Effect Transistor,
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| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 1.4 A | |
| Drain-source On Resistance-Max | 13 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 7.6 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 86 W | |
| Pulsed Drain Current-Max (IDM) | 3 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |