Part Details for IXTY1N100P-TRL by Littelfuse Inc
Overview of IXTY1N100P-TRL by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXTY1N100P-TRL
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1906
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Newark | Ixty1N100P Trl/ Tr |Littelfuse IXTY1N100P-TRL RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$1.1500 / $1.3700 | Buy Now |
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DISTI #
5656-IXTY1N100P-TRLTR-ND
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DigiKey | MOSFET N-CH 1000V 1A TO252 Min Qty: 2500 Lead time: 57 Weeks Container: Tape & Reel (TR) | Temporarily Out of Stock |
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$1.1166 | Buy Now |
Part Details for IXTY1N100P-TRL
IXTY1N100P-TRL CAD Models
IXTY1N100P-TRL Part Data Attributes
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IXTY1N100P-TRL
Littelfuse Inc
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Datasheet
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IXTY1N100P-TRL
Littelfuse Inc
Power Field-Effect Transistor, 1A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA,
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| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 100 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1000 V | |
| Drain Current-Max (ID) | 1 A | |
| Drain-source On Resistance-Max | 15 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 5.5 pF | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 50 W | |
| Pulsed Drain Current-Max (IDM) | 1.8 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |