IXTY08N100P
Description: Power Field-Effect Transistor, 0.8A I(D), 1000V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3

Overview of IXTY08N100P by Littelfuse Inc

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXTY08N100P by Littelfuse Inc

Part # Manufacturer Description Stock Price Buy
DISTI # 03AH1901
Newark Disc Mosfet N-Ch Std-Polar To-252D/ Tube |Littelfuse IXTY08N100P RoHS: Not Compliant Min Qty: 350 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 100 $2.2600
  • 500 $2.0500
  • 1,000 $1.8100
  • 2,500 $1.6900
$1.6900 / $2.2600 Buy Now
DISTI # IXTY08N100P-ND
DigiKey MOSFET N-CH 1000V 800MA TO252 Min Qty: 350 Lead time: 57 Weeks Container: Tube Temporarily Out of Stock
  • 350 $1.8082
$1.8082 Buy Now
DISTI # P40:2555_18456302
Arrow Electronics Trans MOSFET N-CH 1KV 0.8A 3-Pin(2+Tab) DPAK RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 20 Weeks Date Code: 2116 Europe - 201
  • 1 $1.6972
  • 350 $1.4149
$1.4149 / $1.6972 Buy Now

CAD Models for IXTY08N100P by Littelfuse Inc
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Part Data Attributes for IXTY08N100P by Littelfuse Inc

IXTY08N100P
Littelfuse Inc
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
LITTELFUSE INC
Package Description
SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
LITTELFUSE
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
80 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
1000 V
Drain Current-Max (ID)
0.8 A
Drain-source On Resistance-Max
20 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code
TO-252
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
42 W
Pulsed Drain Current-Max (IDM)
1.8 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
Matte Tin (Sn)
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
10
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. IXTY08N100P
    Littelfuse Inc
    Power Field-Effect Transistor, 0.8A I(D), 1000V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3
    VS

Alternate Parts for IXTY08N100P

This table gives cross-reference parts and alternative options found for IXTY08N100P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTY08N100P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
IXTA08N100P Power Field-Effect Transistor, 0.8A I(D), 1000V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN Littelfuse Inc IXTY08N100P vs IXTA08N100P
IXTP08N100P Power Field-Effect Transistor, 0.8A I(D), 1000V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IXYS Corporation IXTY08N100P vs IXTP08N100P
IXTA08N100P Power Field-Effect Transistor, 0.8A I(D), 1000V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN IXYS Corporation IXTY08N100P vs IXTA08N100P
IXTP08N100P Power Field-Effect Transistor, 0.8A I(D), 1000V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Littelfuse Inc IXTY08N100P vs IXTP08N100P

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