Datasheets
IXTY02N50D by:

Power Field-Effect Transistor, 0.2A I(D), 500V, 30ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN

Part Details for IXTY02N50D by IXYS Corporation

Overview of IXTY02N50D by IXYS Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Medical Imaging Automotive Robotics and Drones

Price & Stock for IXTY02N50D

Part # Distributor Description Stock Price Buy
DISTI # IXTY02N50D-ND
DigiKey MOSFET N-CH 500V 200MA TO252 Min Qty: 1 Lead time: 57 Weeks Container: Tube 328
In Stock
  • 1 $2.4000
  • 70 $1.9246
  • 140 $1.5835
  • 560 $1.3399
  • 1,050 $1.1369
  • 2,030 $1.0800
  • 5,040 $1.0394
$1.0394 / $2.4000 Buy Now
DISTI # 747-IXTY02N50D
Mouser Electronics MOSFET 0.2 Amps 500V 30 Rds RoHS: Compliant 5270
  • 1 $2.3900
  • 10 $1.9800
  • 70 $1.5800
  • 280 $1.4600
  • 560 $1.3200
  • 1,050 $1.1300
  • 2,520 $1.0700
  • 5,040 $1.0300
$1.0300 / $2.3900 Buy Now
DISTI # IXTY02N50D
TME Transistor: N-MOSFET, unipolar, 500V, 200mA, Idm: 800mA, 25W, TO252 Min Qty: 1 0
  • 1 $1.7900
  • 3 $1.6000
  • 10 $1.4100
  • 70 $1.2800
$1.2800 / $1.7900 RFQ

Part Details for IXTY02N50D

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IXTY02N50D Part Data Attributes

IXTY02N50D IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXTY02N50D IXYS Corporation Power Field-Effect Transistor, 0.2A I(D), 500V, 30ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-252AA
Package Description SMALL OUTLINE, R-PSSO-G2
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 30 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 0.8 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTY02N50D

This table gives cross-reference parts and alternative options found for IXTY02N50D. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTY02N50D, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTY02N50D Power Field-Effect Transistor, Littelfuse Inc IXTY02N50D vs IXTY02N50D
IXTP02N50D Power Field-Effect Transistor, Littelfuse Inc IXTY02N50D vs IXTP02N50D

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