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Transistors / Power Field-Effect Transistors / IXTY02N120P
Datasheets
IXTY02N120P by:

Power Field-Effect Transistor, 0.2A I(D), 1200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3

Part Details for IXTY02N120P by Littelfuse Inc

Overview of IXTY02N120P by Littelfuse Inc

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

Price & Stock for IXTY02N120P

Part # Distributor Description Stock Price Buy
DISTI # 03AH1897
Newark Mosfet, N-Ch, 1.2Kv, 0.2A, To-252, Channel Type:N Channel, Drain Source Voltage Vds:1.2Kv, Continuous Drain Current Id:200Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Littelfuse IXTY02N120P RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 26
  • 1 $1.6200
  • 25 $1.4600
  • 100 $1.3000
  • 250 $1.1300
  • 500 $1.0600
  • 1,000 $1.0000
$1.0000 / $1.6200 Buy Now
DISTI # IXTY02N120P-ND
DigiKey MOSFET N-CH 1200V 200MA TO252 Min Qty: 1 Lead time: 57 Weeks Container: Tube 17910
In Stock
  • 1 $2.0900
  • 70 $1.0790
  • 140 $0.9871
  • 560 $0.9865
$0.9865 / $2.0900 Buy Now
DISTI # E02:0323_07043710
Arrow Electronics Trans MOSFET N-CH 1.2KV 0.2A 3-Pin(2+Tab) DPAK Min Qty: 350 Package Multiple: 70 Lead time: 57 Weeks Date Code: 2426 Europe - 2450
  • 350 $1.0327
$1.0327 Buy Now
DISTI # 82776077
Verical Trans MOSFET N-CH 1.2KV 0.2A 3-Pin(2+Tab) DPAK Min Qty: 350 Package Multiple: 350 Date Code: 2426 Americas - 2450
  • 350 $1.0350
$1.0350 Buy Now

Part Details for IXTY02N120P

IXTY02N120P CAD Models

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IXTY02N120P Part Data Attributes

Parametric Data
IXTY02N120P Littelfuse Inc
Buy Now Datasheet
Compare Parts:
IXTY02N120P Littelfuse Inc Power Field-Effect Transistor, 0.2A I(D), 1200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 40 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 0.075 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 33 W
Pulsed Drain Current-Max (IDM) 0.6 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTY02N120P

This table gives cross-reference parts and alternative options found for IXTY02N120P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTY02N120P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTP02N120P Power Field-Effect Transistor, 0.2A I(D), 1200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Littelfuse Inc IXTY02N120P vs IXTP02N120P
IXTP02N120P Power Field-Effect Transistor, 0.2A I(D), 1200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IXYS Corporation IXTY02N120P vs IXTP02N120P
IXTY02N120P Power Field-Effect Transistor, 0.2A I(D), 1200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 IXYS Corporation IXTY02N120P vs IXTY02N120P

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