Part Details for IXTY02N120P by IXYS Corporation
Overview of IXTY02N120P by IXYS Corporation
- Distributor Offerings: (4 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Medical Imaging
Robotics and Drones
Price & Stock for IXTY02N120P
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
|
DISTI #
747-IXTY02N120P
|
Mouser Electronics | MOSFETs 0.2Amps 1200V | 1742 |
|
$1.0200 / $2.3400 | Buy Now |
|
|
Future Electronics | N-Channel 1200V 200mA (Tc) 33W (Tc) Surface Mount TO-252, (D-Pak) RoHS: Compliant pbFree: Yes Min Qty: 350 Package Multiple: 70 Container: Tube | 0Tube |
|
$0.9700 / $1.1400 | Buy Now |
|
DISTI #
IXTY02N120P
|
TTI | MOSFETs 0.2Amps 1200V Min Qty: 350 Package Multiple: 70 Container: Tube | Americas - 0 |
|
$0.9900 / $1.0100 | Buy Now |
|
DISTI #
IXTY02N120P
|
TME | Transistor: N-MOSFET, unipolar, 1.2kV, 0.2A, 33W, TO252, 1.6us Min Qty: 1 | 0 |
|
$1.2600 / $2.1700 | RFQ |
Part Details for IXTY02N120P
IXTY02N120P CAD Models
IXTY02N120P Part Data Attributes
|
|
IXTY02N120P
IXYS Corporation
Buy Now
Datasheet
|
Compare Parts:
IXTY02N120P
IXYS Corporation
Power Field-Effect Transistor, 0.2A I(D), 1200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-252 | |
| Package Description | PLASTIC PACKAGE-3 | |
| Pin Count | 4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 40 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 0.2 A | |
| Drain-source On Resistance-Max | 0.075 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 33 W | |
| Pulsed Drain Current-Max (IDM) | 0.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTY02N120P
This table gives cross-reference parts and alternative options found for IXTY02N120P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTY02N120P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTP02N120P | Power Field-Effect Transistor, 0.2A I(D), 1200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Littelfuse Inc | IXTY02N120P vs IXTP02N120P |
| IXTY02N120P | Power Field-Effect Transistor, 0.2A I(D), 1200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, PLASTIC PACKAGE-3 | Littelfuse Inc | IXTY02N120P vs IXTY02N120P |
| IXTP02N120P | Power Field-Effect Transistor, 0.2A I(D), 1200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | IXYS Corporation | IXTY02N120P vs IXTP02N120P |