Part Details for IXTP1R4N120P by IXYS Corporation
Overview of IXTP1R4N120P by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTP1R4N120P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTP1R4N120P
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Mouser Electronics | MOSFETs 1.4 Amps 1200V 15 Rds RoHS: Compliant | 0 |
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$2.7600 / $2.9700 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Lead time: 24 Weeks Container: Tube | 0Tube |
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$2.9700 | Buy Now |
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DISTI #
IXTP1R4N120P
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TTI | MOSFETs 1.4 Amps 1200V 15 Rds Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$2.6100 / $2.8400 | Buy Now |
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DISTI #
IXTP1R4N120P
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TME | Transistor: N-MOSFET, Polar™, unipolar, 1.2kV, 1.4A, Idm: 3A, 86W Min Qty: 1 | 0 |
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$3.2000 / $4.4900 | RFQ |
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Chip 1 Exchange | INSTOCK | 1306 |
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RFQ | |
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New Advantage Corporation | MOSFET DIS.1.4A 1200V N-CH TO220 POLAR THT RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 605 |
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$6.0100 / $6.4400 | Buy Now |
Part Details for IXTP1R4N120P
IXTP1R4N120P CAD Models
IXTP1R4N120P Part Data Attributes
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IXTP1R4N120P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTP1R4N120P
IXYS Corporation
Power Field-Effect Transistor, 1.4A I(D), 1200V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Part Package Code | TO-220AB | |
| Package Description | TO-220, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 150 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 1200 V | |
| Drain Current-Max (ID) | 1.4 A | |
| Drain-source On Resistance-Max | 13 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-220AB | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 86 W | |
| Pulsed Drain Current-Max (IDM) | 3 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXTP1R4N120P
This table gives cross-reference parts and alternative options found for IXTP1R4N120P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP1R4N120P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IXTA1R4N120P | Power Field-Effect Transistor, 1.4A I(D), 1200V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | IXYS Corporation | IXTP1R4N120P vs IXTA1R4N120P |
| IXTP1R4N120P | Power Field-Effect Transistor, 1.4A I(D), 1200V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Littelfuse Inc | IXTP1R4N120P vs IXTP1R4N120P |
| IXTA1R4N120P | Power Field-Effect Transistor, 1.4A I(D), 1200V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN | Littelfuse Inc | IXTP1R4N120P vs IXTA1R4N120P |