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Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXTP10P50P-ND
|
DigiKey | MOSFET P-CH 500V 10A TO220AB Min Qty: 1 Lead time: 24 Weeks Container: Tube |
1096 In Stock |
|
$3.3500 / $6.7400 | Buy Now |
DISTI #
E02:0323_07040901
|
Arrow Electronics | Trans MOSFET P-CH 500V 10A 3-Pin(3+Tab) TO-220AB Min Qty: 1 Package Multiple: 1 Lead time: 57 Weeks Date Code: 2428 | Europe - 260 |
|
$3.2527 / $4.8815 | Buy Now |
DISTI #
84427326
|
Verical | Trans MOSFET P-CH 500V 10A 3-Pin(3+Tab) TO-220AB Min Qty: 2 Package Multiple: 1 Date Code: 2428 | Americas - 260 |
|
$3.2597 / $4.8921 | Buy Now |
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|
IXTP10P50P
Littelfuse Inc
Buy Now
Datasheet
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Compare Parts:
IXTP10P50P
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 1500 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 10 A | |
Drain-source On Resistance-Max | 1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 42 pF | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 300 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Surface Mount | NO | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IXTP10P50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP10P50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXTP10P50P | Power Field-Effect Transistor, 10A I(D), 500V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXYS Corporation | IXTP10P50P vs IXTP10P50P |
IXTQ10P50P | Power Field-Effect Transistor, | Littelfuse Inc | IXTP10P50P vs IXTQ10P50P |
IXTQ10P50P | Power Field-Effect Transistor, 10A I(D), 500V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN | IXYS Corporation | IXTP10P50P vs IXTQ10P50P |
IXTH10P50P | Power Field-Effect Transistor, 10A I(D), 500V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | IXTP10P50P vs IXTH10P50P |