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Transistors / Power Field-Effect Transistors / IXTP102N15T
Datasheets
IXTP102N15T by:
IXYS Corporation
IXYS Corporation
Littelfuse Inc
Not Found

Power Field-Effect Transistor, 102A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

Part Details for IXTP102N15T by IXYS Corporation

Results Overview of IXTP102N15T by IXYS Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

IXTP102N15T Information

IXTP102N15T by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXTP102N15T

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTP102N15T
Mouser Electronics MOSFETs 102 Amps 150V 18 Rds RoHS: Compliant 0
  • 300 $3.4000
  • 500 $2.9000
$2.9000 / $3.4000 Order Now
Future Electronics MOSFET 102 Amps 150V 18 Rds RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $3.1000
$3.1000 Buy Now
DISTI # IXTP102N15T
TTI MOSFETs 102 Amps 150V 18 Rds Min Qty: 300 Package Multiple: 50 Container: Tube Americas - 0
  • 300 $2.7800
$2.7800 Buy Now
DISTI # IXTP102N15T
TME Transistor: N-MOSFET, unipolar, 150V, 102A, 455W, TO220AB, 97ns Min Qty: 1 0
  • 1 $4.4200
  • 3 $3.9700
  • 10 $3.5100
  • 50 $3.1600
$3.1600 / $4.4200 RFQ
New Advantage Corporation MOSFET DIS.102A 150V N-CH TO220AB TRENCH THT RoHS: Compliant Min Qty: 1 Package Multiple: 1 59
  • 53 $6.7400
  • 59 $6.2900
$6.2900 / $6.7400 Buy Now

Part Details for IXTP102N15T

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IXTP102N15T Part Data Attributes

Parametric Data
IXTP102N15T IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXTP102N15T IXYS Corporation Power Field-Effect Transistor, 102A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-220AB
Package Description PLASTIC, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 750 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 102 A
Drain-source On Resistance-Max 0.018 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 455 W
Pulsed Drain Current-Max (IDM) 300 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTP102N15T

This table gives cross-reference parts and alternative options found for IXTP102N15T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP102N15T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IXFP102N15T Littelfuse Inc $5.0699 Power Field-Effect Transistor, IXTP102N15T vs IXFP102N15T

IXTP102N15T Related Parts

IXTP102N15T Frequently Asked Questions (FAQ)

  • The maximum junction temperature of the IXTP102N15T is 150°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 125°C for reliable operation.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, ensure good thermal contact between the device and heat sink using a thermal interface material.

  • The recommended gate drive voltage for the IXTP102N15T is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption.

  • Yes, the IXTP102N15T is suitable for high-frequency switching applications up to 100 kHz. However, ensure that the device is properly cooled and the gate drive circuit is optimized for high-frequency operation.

  • Use a voltage clamp or a transient voltage suppressor (TVS) to protect the IXTP102N15T from overvoltage. Additionally, implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.