Datasheets
IXTP05N100M by:

Power Field-Effect Transistor, 0.7A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN

Part Details for IXTP05N100M by IXYS Corporation

Overview of IXTP05N100M by IXYS Corporation

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Price & Stock for IXTP05N100M

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTP05N100M
Mouser Electronics MOSFETs 0.5 Amps 1000V RoHS: Compliant 297
  • 1 $5.1500
  • 50 $3.1500
  • 100 $2.7000
  • 250 $2.5500
  • 500 $1.9700
  • 1,000 $1.8600
$1.8600 / $5.1500 Buy Now
Future Electronics IXTP05xx Series 1000 V 700 mA 25 W N-Channel High Voltage Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $2.2800
  • 150 $2.2200
  • 250 $2.1900
  • 1,000 $2.1200
  • 1,500 $2.0800
$2.0800 / $2.2800 Buy Now
Quest Components   2080
  • 1 $2.7840
  • 467 $1.1484
  • 872 $1.0440
$1.0440 / $2.7840 Buy Now
DISTI # IXTP05N100M
TTI MOSFETs 0.5 Amps 1000V Min Qty: 300 Package Multiple: 50 Container: Tube Americas - 0
  • 300 $2.1100
  • 500 $1.9400
  • 1,000 $1.8600
$1.8600 / $2.1100 Buy Now
DISTI # IXTP05N100M
TME Transistor: N-MOSFET, unipolar, 1kV, 0.7A, 25W, TO220FP, 710ns Min Qty: 1 0
  • 1 $2.9800
  • 3 $2.6300
  • 10 $2.3700
  • 50 $2.2100
$2.2100 / $2.9800 RFQ
New Advantage Corporation MOSFET DIS.700mA 1000V N-CH TO220AB HIGH VOLTAGE RoHS: Compliant Min Qty: 1 Package Multiple: 1 72
  • 72 $4.7300
$4.7300 Buy Now

Part Details for IXTP05N100M

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IXTP05N100M Part Data Attributes

IXTP05N100M IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXTP05N100M IXYS Corporation Power Field-Effect Transistor, 0.7A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-220AB
Package Description PLASTIC, TO-220, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 100 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1000 V
Drain Current-Max (ID) 0.7 A
Drain-source On Resistance-Max 17 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 3 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Element Material SILICON

Alternate Parts for IXTP05N100M

This table gives cross-reference parts and alternative options found for IXTP05N100M. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP05N100M, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFP05N100M Power Field-Effect Transistor, 0.7A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN Littelfuse Inc IXTP05N100M vs IXFP05N100M

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