Part Details for IXTP05N100M by IXYS Corporation
Overview of IXTP05N100M by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTP05N100M
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTP05N100M
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Mouser Electronics | MOSFETs 0.5 Amps 1000V RoHS: Compliant | 297 |
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$1.8600 / $5.1500 | Buy Now |
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Future Electronics | IXTP05xx Series 1000 V 700 mA 25 W N-Channel High Voltage Mosfet - TO-220AB RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube | 0Tube |
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$2.0800 / $2.2800 | Buy Now |
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Quest Components | 2080 |
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$1.0440 / $2.7840 | Buy Now | |
DISTI #
IXTP05N100M
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TTI | MOSFETs 0.5 Amps 1000V Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$1.8600 / $2.1100 | Buy Now |
DISTI #
IXTP05N100M
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TME | Transistor: N-MOSFET, unipolar, 1kV, 0.7A, 25W, TO220FP, 710ns Min Qty: 1 | 0 |
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$2.2100 / $2.9800 | RFQ |
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New Advantage Corporation | MOSFET DIS.700mA 1000V N-CH TO220AB HIGH VOLTAGE RoHS: Compliant Min Qty: 1 Package Multiple: 1 | 72 |
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$4.7300 | Buy Now |
Part Details for IXTP05N100M
IXTP05N100M CAD Models
IXTP05N100M Part Data Attributes
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IXTP05N100M
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTP05N100M
IXYS Corporation
Power Field-Effect Transistor, 0.7A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | TO-220AB | |
Package Description | PLASTIC, TO-220, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1000 V | |
Drain Current-Max (ID) | 0.7 A | |
Drain-source On Resistance-Max | 17 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 25 W | |
Pulsed Drain Current-Max (IDM) | 3 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | Tin/Silver/Copper (Sn/Ag/Cu) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Element Material | SILICON |
Alternate Parts for IXTP05N100M
This table gives cross-reference parts and alternative options found for IXTP05N100M. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTP05N100M, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXFP05N100M | Power Field-Effect Transistor, 0.7A I(D), 1000V, 17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Littelfuse Inc | IXTP05N100M vs IXFP05N100M |