Datasheets
IXTH75N10 by:

Power Field-Effect Transistor, 75A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

Part Details for IXTH75N10 by IXYS Corporation

Overview of IXTH75N10 by IXYS Corporation

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Applications Industrial Automation Electronic Manufacturing

Price & Stock for IXTH75N10

Part # Distributor Description Stock Price Buy
DISTI # IXTH75N10-ND
DigiKey MOSFET N-CH 100V 75A TO247 Min Qty: 30 Lead time: 43 Weeks Container: Tube Limited Supply - Call
  • 30 $9.8557
$9.8557 Buy Now
DISTI # 747-IXTH75N10
Mouser Electronics MOSFET STD N-CHNL PWR MOSFE 100V, 75A RoHS: Compliant 0
Order Now
DISTI # V79:2366_19815520
Arrow Electronics Trans MOSFET N-CH Si 100V 75A 3-Pin(3+Tab) TO-247AD Min Qty: 1 Package Multiple: 1 Date Code: 1742 Americas - 1
  • 1 $6.6400
$6.6400 Buy Now
Onlinecomponents.com Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-247AD RoHS: Compliant 44 In Stock
  • 1 $43.8100
  • 50 $10.2900
  • 100 $9.4100
  • 200 $8.4200
  • 500 $7.7900
  • 2,500 $7.6400
$7.6400 / $43.8100 Buy Now
DISTI # 30249588
Verical Trans MOSFET N-CH Si 100V 75A 3-Pin(3+Tab) TO-247AD Min Qty: 1 Package Multiple: 1 Date Code: 1742 Americas - 1
  • 1 $6.6400
$6.6400 Buy Now
Bristol Electronics   30
RFQ
Quest Components MOSFET Transistor, N-Channel, TO-218VAR 24
  • 1 $16.6316
  • 6 $14.7836
  • 18 $13.6748
$13.6748 / $16.6316 Buy Now
Component Electronics, Inc IN STOCK SHIP TODAY 57
  • 1 $8.4600
  • 100 $6.3500
  • 1,000 $5.5000
$5.5000 / $8.4600 Buy Now

Part Details for IXTH75N10

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IXTH75N10 Part Data Attributes

IXTH75N10 IXYS Corporation
Buy Now Datasheet
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IXTH75N10 IXYS Corporation Power Field-Effect Transistor, 75A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer IXYS CORP
Part Package Code TO-247AD
Package Description TO-247AD, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 75 A
Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 300 W
Power Dissipation-Max (Abs) 250 W
Pulsed Drain Current-Max (IDM) 300 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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