Datasheets
IXTH26P20P by:

Power Field-Effect Transistor, 26A I(D), 200V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3

Part Details for IXTH26P20P by IXYS Corporation

Overview of IXTH26P20P by IXYS Corporation

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Price & Stock for IXTH26P20P

Part # Distributor Description Stock Price Buy
DISTI # IXTH26P20P-ND
DigiKey MOSFET P-CH 200V 26A TO247 Min Qty: 1 Lead time: 41 Weeks Container: Tube 274
In Stock
  • 1 $6.3000
  • 30 $5.0317
  • 120 $4.5020
  • 510 $3.9723
  • 1,020 $3.5751
  • 2,010 $3.3500
$3.3500 / $6.3000 Buy Now
DISTI # 747-IXTH26P20P
Mouser Electronics MOSFET -26.0 Amps -200V 0.170 Rds RoHS: Compliant 506
  • 1 $6.3000
  • 10 $5.4100
  • 30 $5.2700
  • 120 $4.7300
  • 270 $4.6000
$4.6000 / $6.3000 Buy Now
DISTI # IXTH26P20P
TME Transistor: P-MOSFET, PolarP™, unipolar, -200V, -26A, 300W, TO247-3 Min Qty: 1 0
  • 1 $4.7200
  • 3 $4.2500
  • 10 $3.7600
  • 30 $3.3700
$3.3700 / $4.7200 RFQ

Part Details for IXTH26P20P

IXTH26P20P CAD Models

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IXTH26P20P Part Data Attributes

IXTH26P20P IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXTH26P20P IXYS Corporation Power Field-Effect Transistor, 26A I(D), 200V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC PACKAGE-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-247AD
Package Description PLASTIC PACKAGE-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 26 A
Drain-source On Resistance-Max 0.17 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 300 W
Pulsed Drain Current-Max (IDM) 70 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTH26P20P

This table gives cross-reference parts and alternative options found for IXTH26P20P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTH26P20P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTP26P20P Power Field-Effect Transistor, 26A I(D), 200V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN IXYS Corporation IXTH26P20P vs IXTP26P20P
IXTA26P20P Power Field-Effect Transistor, Littelfuse Inc IXTH26P20P vs IXTA26P20P
IXTP26P20P Power Field-Effect Transistor, Littelfuse Inc IXTH26P20P vs IXTP26P20P
IXTH26P20P Power Field-Effect Transistor, Littelfuse Inc IXTH26P20P vs IXTH26P20P

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