IXTH150N15X4
Description: Power Field-Effect Transistor,

Overview of IXTH150N15X4 by IXYS Corporation

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
  • Distributor Offerings: ( 4 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for IXTH150N15X4 by IXYS Corporation

Part # Manufacturer Description Stock Price Buy
DISTI # 747-IXTH150N15X4
Mouser Electronics MOSFETs TO247 150V 150A N-CH HIPER RoHS: Compliant 220
  • 1 $11.6800
  • 10 $10.9100
  • 30 $9.4600
  • 60 $9.4500
  • 120 $8.9000
  • 270 $8.7400
  • 510 $7.6200
  • 1,020 $7.2700
$7.2700 / $11.6800 Buy Now
Future Electronics 150V, 150A, 7.2M Ohm, N-Channel, TO-247, MOSFET RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 32 Weeks Container: Tube 0
Tube
  • 30 $8.5100
  • 90 $8.4400
  • 120 $8.4200
  • 300 $8.3700
  • 450 $8.3100
$8.3100 / $8.5100 Buy Now
DISTI # IXTH150N15X4
TTI MOSFETs TO247 150V 150A N-CH HIPER Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $8.3200
  • 510 $7.5400
  • 1,020 $7.2000
$7.2000 / $8.3200 Buy Now
New Advantage Corporation MOSFET DIS.150A 150V N-CH TO-247AD ULTRA JUNCTION RoHS: Compliant Min Qty: 1 Package Multiple: 1 48
  • 20 $18.0100
  • 48 $16.8100
$16.8100 / $18.0100 Buy Now

CAD Models for IXTH150N15X4 by IXYS Corporation
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Part Data Attributes for IXTH150N15X4 by IXYS Corporation

IXTH150N15X4
IXYS Corporation
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
IXYS CORP
Reach Compliance Code
compliant
ECCN Code
EAR99
Additional Feature
AVALANCHE RATED
Avalanche Energy Rating (Eas)
1000 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
150 V
Drain Current-Max (ID)
150 A
Drain-source On Resistance-Max
0.0072 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)
4 pF
JEDEC-95 Code
TO-247
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Operating Temperature-Max
175 °C
Operating Temperature-Min
-55 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Power Dissipation-Max (Abs)
480 W
Pulsed Drain Current-Max (IDM)
260 A
Surface Mount
NO
Terminal Form
THROUGH-HOLE
Terminal Position
SINGLE
Transistor Application
SWITCHING
Transistor Element Material
SILICON
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    IXYS Corporation
    Power Field-Effect Transistor,
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