Datasheets
IXTH150N15X4 by:

Power Field-Effect Transistor,

Part Details for IXTH150N15X4 by IXYS Corporation

Overview of IXTH150N15X4 by IXYS Corporation

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for IXTH150N15X4

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTH150N15X4
Mouser Electronics MOSFETs TO247 150V 150A N-CH HIPER RoHS: Compliant 200
  • 1 $11.7900
  • 10 $11.4100
  • 30 $7.6000
  • 120 $6.8800
$6.8800 / $11.7900 Buy Now
Future Electronics 150V, 150A, 7.2M Ohm, N-Channel, TO-247, MOSFET RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 30 Lead time: 32 Weeks Container: Tube 0
Tube
  • 30 $6.9200
  • 90 $6.8600
  • 150 $6.8400
  • 300 $6.8000
  • 600 $6.7500
$6.7500 / $6.9200 Buy Now
DISTI # IXTH150N15X4
TTI MOSFETs TO247 150V 150A N-CH HIPER Min Qty: 300 Package Multiple: 30 Container: Tube Americas - 0
  • 300 $6.8900
$6.8900 Buy Now
New Advantage Corporation MOSFET DIS.150A 150V N-CH TO-247AD ULTRA JUNCTION RoHS: Compliant Min Qty: 1 Package Multiple: 1 48
  • 20 $17.5100
  • 48 $16.3400
$16.3400 / $17.5100 Buy Now

Part Details for IXTH150N15X4

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IXTH150N15X4 Part Data Attributes

IXTH150N15X4 IXYS Corporation
Buy Now Datasheet
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IXTH150N15X4 IXYS Corporation Power Field-Effect Transistor,
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1000 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 150 V
Drain Current-Max (ID) 150 A
Drain-source On Resistance-Max 0.0072 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 4 pF
JEDEC-95 Code TO-247
JESD-30 Code R-PSFM-T3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 480 W
Pulsed Drain Current-Max (IDM) 260 A
Surface Mount NO
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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