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Transistors / Power Field-Effect Transistors / IXTA80N10T
Datasheets
IXTA80N10T by:
IXYS Corporation
IXYS Corporation
Littelfuse Inc
Not Found

Power Field-Effect Transistor, 80A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN

Part Details for IXTA80N10T by IXYS Corporation

Results Overview of IXTA80N10T by IXYS Corporation

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

IXTA80N10T Information

IXTA80N10T by IXYS Corporation is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXTA80N10T

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTA80N10T
Mouser Electronics MOSFETs 80 Amps 100V 13.0 Rds RoHS: Compliant 0
Order Now
Future Electronics N-Channel 100 V 80 A 14 mΩ Surface Mount TrenchMV Power Mosfet - TO-263 RoHS: Compliant pbFree: Yes Min Qty: 350 Package Multiple: 50 Lead time: 25 Weeks Container: Tube 0
Tube
  • 50 $1.8400
  • 150 $1.8200
  • 500 $1.7900
  • 1,000 $1.7800
  • 2,000 $1.7500
$1.7500 / $1.8400 Buy Now
DISTI # IXTA80N10T
TTI MOSFETs 80 Amps 100V 13.0 Rds Min Qty: 300 Package Multiple: 50 Container: Tube Americas - 0
  • 300 $1.7900
  • 500 $1.7600
  • 1,000 $1.7200
  • 2,000 $1.6900
$1.6900 / $1.7900 Buy Now
DISTI # IXTA80N10T
TME Transistor: N-MOSFET, unipolar, 100V, 80A, 230W, TO263, 100ns Min Qty: 1 0
  • 1 $2.9100
  • 3 $2.6200
  • 10 $2.3100
  • 50 $2.0900
$2.0900 / $2.9100 RFQ
New Advantage Corporation MOSFET DIS.80A 100V N-CH TO263(D2BAK) TRENCHMV RoHS: Compliant Min Qty: 1 Package Multiple: 100 276
  • 100 $4.3900
  • 276 $4.1000
$4.1000 / $4.3900 Buy Now

Part Details for IXTA80N10T

IXTA80N10T CAD Models

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IXTA80N10T Part Data Attributes

Parametric Data
IXTA80N10T IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXTA80N10T IXYS Corporation Power Field-Effect Transistor, 80A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code D2PAK
Package Description TO-263, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 400 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 80 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 230 W
Pulsed Drain Current-Max (IDM) 220 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTA80N10T

This table gives cross-reference parts and alternative options found for IXTA80N10T. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA80N10T, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
NDP706A National Semiconductor Corporation Check for Price TRANSISTOR 75 A, 60 V, 0.015 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power IXTA80N10T vs NDP706A
IRFS620 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN IXTA80N10T vs IRFS620
STP19N06 STMicroelectronics Check for Price 19A, 60V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN IXTA80N10T vs STP19N06
FDH45N50F Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 45A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247, 3 PIN IXTA80N10T vs FDH45N50F
STD9N10T4 STMicroelectronics Check for Price 9A, 100V, 0.27ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 IXTA80N10T vs STD9N10T4
SSH60N08 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 60A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IXTA80N10T vs SSH60N08
NDP706AE Texas Instruments Check for Price 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220, TO-220, 3 PIN IXTA80N10T vs NDP706AE
IXFK60N55Q2 Littelfuse Inc Check for Price Power Field-Effect Transistor, 60A I(D), 550V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN IXTA80N10T vs IXFK60N55Q2
STW20NK70Z STMicroelectronics Check for Price 20A, 700V, 0.285ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AC, TO-247, 3 PIN IXTA80N10T vs STW20NK70Z
STD2NA60-1 STMicroelectronics Check for Price 2.3A, 600V, 4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, IPAK-3 IXTA80N10T vs STD2NA60-1

IXTA80N10T Related Parts

IXTA80N10T Frequently Asked Questions (FAQ)

  • The maximum safe operating area (SOA) for the IXTA80N10T is typically defined by the manufacturer as the maximum voltage and current ratings, which are 1000V and 80A respectively. However, it's recommended to consult the datasheet and application notes for specific SOA curves and guidelines.

  • To ensure proper cooling, it's essential to provide adequate heat sinking and thermal management. This can be achieved by using a heat sink with a thermal resistance of 1°C/W or lower, and ensuring good thermal contact between the device and heat sink. Additionally, consider using a thermal interface material and ensuring good airflow around the device.

  • The recommended gate drive voltage for the IXTA80N10T is typically between 10V to 15V, with a maximum gate-source voltage of 20V. However, it's recommended to consult the datasheet and application notes for specific gate drive requirements and guidelines.

  • To protect the IXTA80N10T from overvoltage and overcurrent conditions, consider using overvoltage protection (OVP) and overcurrent protection (OCP) circuits. These can be implemented using external components such as zener diodes, resistors, and fuses. Additionally, consider using a gate drive circuit with built-in protection features.

  • The typical turn-on and turn-off time for the IXTA80N10T is around 10-20ns, depending on the gate drive voltage and circuit conditions. However, it's recommended to consult the datasheet and application notes for specific switching time characteristics.