Datasheets
IXTA200N055T2-7 by:
IXYS Corporation
IXYS Corporation
IXYS Integrated Circuits Division
Littelfuse Inc
Not Found

Power Field-Effect Transistor, 200A I(D), 55V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 7 PIN

Part Details for IXTA200N055T2-7 by IXYS Corporation

Overview of IXTA200N055T2-7 by IXYS Corporation

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Price & Stock for IXTA200N055T2-7

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTA200N055T2-7
Mouser Electronics MOSFETs TO263 N CHAN 55V 0
  • 1 $4.0700
  • 10 $3.4200
  • 50 $3.2200
  • 100 $2.7400
  • 250 $2.6100
$2.6100 / $4.0700 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube 0
Tube
  • 50 $2.2200
$2.2200 Buy Now
DISTI # IXTA200N055T2-7
TTI MOSFETs TO263 N CHAN 55V Min Qty: 300 Package Multiple: 50 Container: Tube Americas - 0
  • 300 $2.5800
$2.5800 Buy Now

Part Details for IXTA200N055T2-7

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IXTA200N055T2-7 Part Data Attributes

IXTA200N055T2-7 IXYS Corporation
Buy Now Datasheet
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IXTA200N055T2-7 IXYS Corporation Power Field-Effect Transistor, 200A I(D), 55V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 7 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code D2PAK
Package Description TO-263, 7 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 600 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 55 V
Drain Current-Max (ID) 200 A
Drain-source On Resistance-Max 0.0042 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263
JESD-30 Code R-PSSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 360 W
Pulsed Drain Current-Max (IDM) 500 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXTA200N055T2-7

This table gives cross-reference parts and alternative options found for IXTA200N055T2-7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA200N055T2-7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IXTA220N055T IXYS Corporation Check for Price Power Field-Effect Transistor, 220A I(D), 55V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 6 PIN IXTA200N055T2-7 vs IXTA220N055T
IXTP200N055T2 IXYS Corporation $1.7663 Power Field-Effect Transistor, 200A I(D), 55V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN IXTA200N055T2-7 vs IXTP200N055T2
IXTA200N055T2-7 Littelfuse Inc $3.0782 Power Field-Effect Transistor, IXTA200N055T2-7 vs IXTA200N055T2-7
IXTP200N055T2 Littelfuse Inc $2.9568 Power Field-Effect Transistor, IXTA200N055T2-7 vs IXTP200N055T2
IXTA200N055T2 Littelfuse Inc $3.0782 Power Field-Effect Transistor, IXTA200N055T2-7 vs IXTA200N055T2
IXTP220N055T IXYS Corporation Check for Price Power Field-Effect Transistor, 220A I(D), 55V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN IXTA200N055T2-7 vs IXTP220N055T

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