Part Details for IXTA200N055T2-7 by IXYS Corporation
Overview of IXTA200N055T2-7 by IXYS Corporation
- Distributor Offerings: (3 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXTA200N055T2-7
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXTA200N055T2-7
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Mouser Electronics | MOSFETs TO263 N CHAN 55V | 0 |
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$2.6100 / $4.0700 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 50 Package Multiple: 50 Container: Tube |
0 Tube |
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$2.2200 | Buy Now |
DISTI #
IXTA200N055T2-7
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TTI | MOSFETs TO263 N CHAN 55V Min Qty: 300 Package Multiple: 50 Container: Tube | Americas - 0 |
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$2.5800 | Buy Now |
Part Details for IXTA200N055T2-7
IXTA200N055T2-7 CAD Models
IXTA200N055T2-7 Part Data Attributes
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IXTA200N055T2-7
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXTA200N055T2-7
IXYS Corporation
Power Field-Effect Transistor, 200A I(D), 55V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 7 PIN
Select a part to compare: |
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Part Package Code | D2PAK | |
Package Description | TO-263, 7 PIN | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 600 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 200 A | |
Drain-source On Resistance-Max | 0.0042 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263 | |
JESD-30 Code | R-PSSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 360 W | |
Pulsed Drain Current-Max (IDM) | 500 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXTA200N055T2-7
This table gives cross-reference parts and alternative options found for IXTA200N055T2-7. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA200N055T2-7, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
IXTA220N055T | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 220A I(D), 55V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263, TO-263, 6 PIN | IXTA200N055T2-7 vs IXTA220N055T |
IXTP200N055T2 | IXYS Corporation | $1.7663 | Power Field-Effect Transistor, 200A I(D), 55V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | IXTA200N055T2-7 vs IXTP200N055T2 |
IXTA200N055T2-7 | Littelfuse Inc | $3.0782 | Power Field-Effect Transistor, | IXTA200N055T2-7 vs IXTA200N055T2-7 |
IXTP200N055T2 | Littelfuse Inc | $2.9568 | Power Field-Effect Transistor, | IXTA200N055T2-7 vs IXTP200N055T2 |
IXTA200N055T2 | Littelfuse Inc | $3.0782 | Power Field-Effect Transistor, | IXTA200N055T2-7 vs IXTA200N055T2 |
IXTP220N055T | IXYS Corporation | Check for Price | Power Field-Effect Transistor, 220A I(D), 55V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | IXTA200N055T2-7 vs IXTP220N055T |