Datasheets
IXTA1R4N120P-TRL by:

Power Field-Effect Transistor,

Part Details for IXTA1R4N120P-TRL by IXYS Corporation

Overview of IXTA1R4N120P-TRL by IXYS Corporation

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Applications Automotive

Price & Stock for IXTA1R4N120P-TRL

Part # Distributor Description Stock Price Buy
DISTI # 747-IXTA1R4N120P-TRL
Mouser Electronics MOSFETs IXTA1R4N120P TRL RoHS: Compliant 0
  • 800 $2.9300
$2.9300 Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Lead time: 24 Weeks Container: Reel 0
Reel
  • 800 $3.1400
$3.1400 Buy Now
DISTI # IXTA1R4N120P-TRL
TTI MOSFETs IXTA1R4N120P TRL Min Qty: 800 Package Multiple: 800 Container: Reel Americas - 0
  • 800 $2.9000
  • 12,000 $2.7600
$2.7600 / $2.9000 Buy Now

Part Details for IXTA1R4N120P-TRL

IXTA1R4N120P-TRL CAD Models

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IXTA1R4N120P-TRL Part Data Attributes

IXTA1R4N120P-TRL IXYS Corporation
Buy Now Datasheet
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IXTA1R4N120P-TRL IXYS Corporation Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description TO-263, 3/2 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 150 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 1200 V
Drain Current-Max (ID) 1.4 A
Drain-source On Resistance-Max 13 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 7.6 pF
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 86 W
Pulsed Drain Current-Max (IDM) 3 A
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

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