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Power Field-Effect Transistor, 1A I(D), 1200V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH1258
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Newark | Disc Mosfet N-Ch Std-Polar To-263D2/ Tube |Littelfuse IXTA1N120P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$2.5400 / $3.4000 | Buy Now |
DISTI #
IXTA1N120P-ND
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DigiKey | MOSFET N-CH 1200V 1A TO263 Min Qty: 1 Lead time: 57 Weeks Container: Tube | Temporarily Out of Stock |
|
$2.3822 / $6.1200 | Buy Now |
DISTI #
E02:0323_07043524
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Arrow Electronics | Trans MOSFET N-CH 1.2KV 1A 3-Pin(2+Tab) D2PAK RoHS: Compliant Min Qty: 300 Package Multiple: 50 Lead time: 57 Weeks Date Code: 2414 | Europe - 400 |
|
$2.5413 / $3.0159 | Buy Now |
DISTI #
82122137
|
Verical | Trans MOSFET N-CH 1.2KV 1A 3-Pin(2+Tab) D2PAK RoHS: Compliant Min Qty: 50 Package Multiple: 50 Date Code: 2414 | Americas - 400 |
|
$2.5429 / $3.0180 | Buy Now |
DISTI #
C1S425203518855
|
Chip1Stop | MOSFET | 400 |
|
$2.8900 / $3.2200 | Buy Now |
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IXTA1N120P
Littelfuse Inc
Buy Now
Datasheet
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IXTA1N120P
Littelfuse Inc
Power Field-Effect Transistor, 1A I(D), 1200V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263, 3 PIN
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 100 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 1200 V | |
Drain Current-Max (ID) | 1 A | |
Drain-source On Resistance-Max | 20 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-263AB | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 63 W | |
Pulsed Drain Current-Max (IDM) | 1.8 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IXTA1N120P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXTA1N120P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IXTP1N120P | Power Field-Effect Transistor, 1A I(D), 1200V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Littelfuse Inc | IXTA1N120P vs IXTP1N120P |