-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Power Field-Effect Transistor,
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
IXKR47N60C5-ND
|
DigiKey | MOSFET N-CH 600V 47A ISOPLUS247 Min Qty: 1 Lead time: 32 Weeks Container: Tube |
107 In Stock |
|
$15.7823 / $23.1700 | Buy Now |
DISTI #
V36:1790_15877981
|
Arrow Electronics | Trans MOSFET N-CH Si 600V 47A 3-Pin(3+Tab) ISOPLUS 247 Min Qty: 1 Package Multiple: 1 Lead time: 32 Weeks Date Code: 2327 | Americas - 1020 |
|
$15.5900 / $22.9900 | Buy Now |
DISTI #
77769900
|
Verical | Trans MOSFET N-CH Si 600V 47A 3-Pin(3+Tab) ISOPLUS 247 Min Qty: 1 Package Multiple: 1 Date Code: 2327 | Americas - 1020 |
|
$15.5900 / $22.9900 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
IXKR47N60C5
Littelfuse Inc
Buy Now
Datasheet
|
Compare Parts:
IXKR47N60C5
Littelfuse Inc
Power Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | LITTELFUSE INC | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | LITTELFUSE | |
Additional Feature | AVALANCHE RATED, HIGH RELIABILITY | |
Avalanche Energy Rating (Eas) | 1950 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 600 V | |
Drain Current-Max (ID) | 47 A | |
Drain-source On Resistance-Max | 0.045 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for IXKR47N60C5. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXKR47N60C5, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
APT50N60JCU3 | Power Field-Effect Transistor, 52A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4 | Microsemi Corporation | IXKR47N60C5 vs APT50N60JCU3 |
MKE38RK600DFELB-TRR | Power Field-Effect Transistor, | Littelfuse Inc | IXKR47N60C5 vs MKE38RK600DFELB-TRR |
APT50N60JCCU2 | Power Field-Effect Transistor, 50A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4 | Microsemi Corporation | IXKR47N60C5 vs APT50N60JCCU2 |
FDM47-06KC5 | Power Field-Effect Transistor, 47A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I4PAK-5 | IXYS Corporation | IXKR47N60C5 vs FDM47-06KC5 |
APT50N60JCU2 | Power Field-Effect Transistor, 52A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4 | Microsemi Corporation | IXKR47N60C5 vs APT50N60JCU2 |
FMD47-06KC5 | Power Field-Effect Transistor, 47A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS, I4PAK-5 | IXYS Corporation | IXKR47N60C5 vs FMD47-06KC5 |
APT50N60JCCU2 | Power Field-Effect Transistor, 50A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXKR47N60C5 vs APT50N60JCCU2 |
MKE38RK600DFELB | Power Field-Effect Transistor, 50A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS-9 | IXYS Corporation | IXKR47N60C5 vs MKE38RK600DFELB |
IXKR47N60C5 | Power Field-Effect Transistor, 47A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS247, 3 PIN | IXYS Corporation | IXKR47N60C5 vs IXKR47N60C5 |