Datasheets
IXKC25N80C by:

Power Field-Effect Transistor, 20A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ISOPLUS220, 3 PIN

Part Details for IXKC25N80C by IXYS Corporation

Overview of IXKC25N80C by IXYS Corporation

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Applications Industrial Automation Energy and Power Systems Renewable Energy Electronic Manufacturing

Price & Stock for IXKC25N80C

Part # Distributor Description Stock Price Buy
DISTI # IXKC25N80C
TME Transistor: N-MOSFET, unipolar, 800V, 25A, ISOPLUS220™, 550ns Min Qty: 1 0
  • 1 $13.1700
  • 3 $11.8300
  • 5 $10.4400
  • 10 $9.3800
$9.3800 / $13.1700 RFQ

Part Details for IXKC25N80C

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IXKC25N80C Part Data Attributes

IXKC25N80C IXYS Corporation
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IXKC25N80C IXYS Corporation Power Field-Effect Transistor, 20A I(D), 800V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ISOPLUS220, 3 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-220AB
Package Description IN-LINE, R-PSIP-T3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 690 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 800 V
Drain Current-Max (ID) 20 A
Drain-source On Resistance-Max 0.15 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSIP-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style IN-LINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN SILVER COPPER
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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