Datasheets
IXGK120N120B3 by:
IXYS Corporation
IXYS Corporation
Littelfuse Inc
Not Found

Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN

Part Details for IXGK120N120B3 by IXYS Corporation

Results Overview of IXGK120N120B3 by IXYS Corporation

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Applications Industrial Automation Electronic Manufacturing

IXGK120N120B3 Information

IXGK120N120B3 by IXYS Corporation is an IGBT.
IGBTs are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXGK120N120B3

Part # Distributor Description Stock Price Buy
DISTI # IXGK120N120B3-ND
DigiKey IGBT PT 1200V 200A TO-264 Min Qty: 300 Lead time: 61 Weeks Container: Tube Temporarily Out of Stock
  • 300 $36.3877
$36.3877 Buy Now
DISTI # 747-IXGK120N120B3
Mouser Electronics IGBTs 200Amps 1200V RoHS: Compliant 5
  • 1 $52.6100
  • 10 $48.5200
  • 25 $44.3900
  • 100 $41.1400
$41.1400 / $52.6100 Buy Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 25 Lead time: 27 Weeks Container: Tube 0
Tube
  • 25 $25.9300
$25.9300 Buy Now
DISTI # IXGK120N120B3
TTI IGBTs 200Amps 1200V Min Qty: 300 Package Multiple: 25 Container: Tube Americas - 0
  • 300 $48.5200
$48.5200 Buy Now
DISTI # IXGK120N120B3
TME Transistor: IGBT, GenX3™, 1.2kV, 120A, 830W, TO264 Min Qty: 1 0
  • 1 $36.8300
  • 3 $33.1400
  • 10 $29.3400
  • 25 $26.3700
$26.3700 / $36.8300 RFQ
Sense Electronic Company Limited TO-264 2197
RFQ

Part Details for IXGK120N120B3

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IXGK120N120B3 Part Data Attributes

IXGK120N120B3 IXYS Corporation
Buy Now Datasheet
Compare Parts:
IXGK120N120B3 IXYS Corporation Insulated Gate Bipolar Transistor, 200A I(C), 1200V V(BR)CES, N-Channel, TO-264AA, TO-264, 3 PIN
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Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Part Package Code TO-264AA
Package Description TO-264, 3 PIN
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature LOW CONDUCTION LOSS
Case Connection COLLECTOR
Collector Current-Max (IC) 200 A
Collector-Emitter Voltage-Max 1200 V
Configuration SINGLE
Gate-Emitter Thr Voltage-Max 5 V
Gate-Emitter Voltage-Max 20 V
JEDEC-95 Code TO-264AA
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 830 W
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application POWER CONTROL
Transistor Element Material SILICON
Turn-off Time-Nom (toff) 885 ns
Turn-on Time-Nom (ton) 122 ns

IXGK120N120B3 Related Parts

IXGK120N120B3 Frequently Asked Questions (FAQ)

  • The maximum allowed power dissipation for the IXGK120N120B3 is dependent on the operating conditions, but typically it is around 300-400 W. However, it's recommended to consult the datasheet and application notes for specific guidance on thermal management and power dissipation.

  • Yes, the IXGK120N120B3 can be used in a parallel configuration to increase current handling, but it's crucial to ensure that the modules are properly matched and that the gate drive and control circuits are designed to handle the increased current. Additionally, thermal management and heat sinking become even more critical in parallel configurations.

  • The recommended gate drive voltage for the IXGK120N120B3 is typically between 15V and 20V, with a maximum of 25V. However, it's essential to consult the datasheet and application notes for specific guidance on gate drive voltage and current requirements.

  • To protect the IXGK120N120B3 from overvoltage and overcurrent conditions, it's recommended to use a combination of voltage and current sensing circuits, along with protective devices such as TVS diodes and fuses. Additionally, implementing overcurrent and overvoltage detection circuits can help prevent damage to the module.

  • The typical switching frequency range for the IXGK120N120B3 is up to 20 kHz, but it can be operated at higher frequencies with proper design and thermal management. However, it's essential to consult the datasheet and application notes for specific guidance on switching frequency and losses.