Part Details for IXGH32N120A3 by Littelfuse Inc
Overview of IXGH32N120A3 by Littelfuse Inc
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for IXGH32N120A3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
29AK0447
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Newark | Transistor, Igbt, 1.2Kv, 75A, To-247 Rohs Compliant: Yes |Littelfuse IXGH32N120A3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk | 282 |
|
$7.2300 / $11.4800 | Buy Now |
|
DISTI #
82697700
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Verical | Trans IGBT Chip N-CH 1200V 75A 300W 3-Pin(3+Tab) TO-247AD Min Qty: 30 Package Multiple: 30 Date Code: 2423 | Americas - 30 |
|
$6.0299 / $6.2132 | Buy Now |
Part Details for IXGH32N120A3
IXGH32N120A3 CAD Models
IXGH32N120A3 Part Data Attributes
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IXGH32N120A3
Littelfuse Inc
Buy Now
Datasheet
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IXGH32N120A3
Littelfuse Inc
Insulated Gate Bipolar Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Additional Feature | LOW CONDUCTION LOSS | |
| Case Connection | COLLECTOR | |
| Collector Current-Max (IC) | 75 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SINGLE | |
| Gate-Emitter Thr Voltage-Max | 5 V | |
| Gate-Emitter Voltage-Max | 20 V | |
| JEDEC-95 Code | TO-247AD | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 300 W | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 1380 ns | |
| Turn-on Time-Nom (ton) | 239 ns | |
| VCEsat-Max | 2.35 V |