Part Details for IXFX26N90 by IXYS Corporation
Overview of IXFX26N90 by IXYS Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFX26N90
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
IXFX26N90-ND
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DigiKey | MOSFET N-CH 900V 26A PLUS 247 Min Qty: 30 Lead time: 57 Weeks Container: Tube | Limited Supply - Call |
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$16.6550 | Buy Now |
DISTI #
747-IXFX26N90
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Mouser Electronics | MOSFETs 26 Amps 900V 0.3 Rds RoHS: Compliant | 0 |
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Order Now |
Part Details for IXFX26N90
IXFX26N90 CAD Models
IXFX26N90 Part Data Attributes
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IXFX26N90
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFX26N90
IXYS Corporation
Power Field-Effect Transistor, 26A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | IXYS CORP | |
Package Description | PLUS247, 3 PIN | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 3000 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 900 V | |
Drain Current-Max (ID) | 26 A | |
Drain-source On Resistance-Max | 0.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 560 W | |
Pulsed Drain Current-Max (IDM) | 104 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Finish | TIN SILVER COPPER | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for IXFX26N90
This table gives cross-reference parts and alternative options found for IXFX26N90. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFX26N90, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IXFE39N90 | Power Field-Effect Transistor, 34A I(D), 900V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN | IXYS Corporation | IXFX26N90 vs IXFE39N90 |
IXFK24N90Q | Power Field-Effect Transistor, 24A I(D), 900V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 | Littelfuse Inc | IXFX26N90 vs IXFK24N90Q |
IXFN27N80 | Power Field-Effect Transistor, 27A I(D), 800V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFX26N90 vs IXFN27N80 |
IXFX24N90Q | Power Field-Effect Transistor, 24A I(D), 900V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | IXYS Corporation | IXFX26N90 vs IXFX24N90Q |
IXFN39N90 | Power Field-Effect Transistor, 39A I(D), 900V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFX26N90 vs IXFN39N90 |
IXFN26N90 | Power Field-Effect Transistor, 26A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 | IXYS Corporation | IXFX26N90 vs IXFN26N90 |
IXFK26N90 | Power Field-Effect Transistor, 26A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN | IXYS Corporation | IXFX26N90 vs IXFK26N90 |
IXFX25N90 | Power Field-Effect Transistor, 25A I(D), 900V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS247, 3 PIN | IXYS Corporation | IXFX26N90 vs IXFX25N90 |
IXFX24N90Q | Power Field-Effect Transistor, 24A I(D), 900V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN | Littelfuse Inc | IXFX26N90 vs IXFX24N90Q |
IXFK25N90 | Power Field-Effect Transistor, 25A I(D), 900V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264, TO-264, 3 PIN | IXYS Corporation | IXFX26N90 vs IXFK25N90 |