Datasheets
IXFT30N50P by:

Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN

Part Details for IXFT30N50P by Littelfuse Inc

Overview of IXFT30N50P by Littelfuse Inc

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Applications Energy and Power Systems Medical Imaging Robotics and Drones

Price & Stock for IXFT30N50P

Part # Distributor Description Stock Price Buy
DISTI # 80AH1981
Newark Mosfet Discrete To-268S/ Tube |Littelfuse IXFT30N50P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $10.9200
  • 500 $10.1500
$10.1500 / $10.9200 Buy Now
DISTI # IXFT30N50P-ND
DigiKey MOSFET N-CH 500V 30A TO268 Min Qty: 300 Lead time: 44 Weeks Container: Tube Temporarily Out of Stock
  • 300 $9.6779
$9.6779 Buy Now
DISTI # 75578301
RS MOSFET DISCRETE TO-268S | Littelfuse IXFT30N50P Min Qty: 30 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk 0
  • 30 $14.9700
$14.9700 RFQ

Part Details for IXFT30N50P

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IXFT30N50P Part Data Attributes

IXFT30N50P Littelfuse Inc
Buy Now Datasheet
Compare Parts:
IXFT30N50P Littelfuse Inc Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Package Description SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1200 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 30 A
Drain-source On Resistance-Max 0.2 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-268AA
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 75 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFT30N50P

This table gives cross-reference parts and alternative options found for IXFT30N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFT30N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXTT30N50P Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation IXFT30N50P vs IXTT30N50P
IXTT30N50P Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Littelfuse Inc IXFT30N50P vs IXTT30N50P
IXFT30N50P Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation IXFT30N50P vs IXFT30N50P
Part Number Description Manufacturer Compare
IXTV30N50P Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN IXYS Corporation IXFT30N50P vs IXTV30N50P
IXTH30N50P Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN IXYS Corporation IXFT30N50P vs IXTH30N50P
IXTT30N50P Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN Littelfuse Inc IXFT30N50P vs IXTT30N50P
IXFV30N50P Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLUS220, 3 PIN IXYS Corporation IXFT30N50P vs IXFV30N50P
IXFH30N50P Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc IXFT30N50P vs IXFH30N50P
IXFT30N50P Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation IXFT30N50P vs IXFT30N50P
IRFP31N50LPBF Power Field-Effect Transistor, 31A I(D), 500V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, ROHS COMPLIANT, TO-247AC, 3 PIN Vishay Intertechnologies IXFT30N50P vs IRFP31N50LPBF
IXTH30N50P Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN Littelfuse Inc IXFT30N50P vs IXTH30N50P
IXTT30N50P Power Field-Effect Transistor, 30A I(D), 500V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXYS Corporation IXFT30N50P vs IXTT30N50P

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