Part Details for IXFN132N50P3 by IXYS Corporation
Overview of IXFN132N50P3 by IXYS Corporation
- Distributor Offerings: (8 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for IXFN132N50P3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
03AH0716
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Newark | Discmsft Nchhiperfetpolar3 Sot-227B(Mini/ Tube Rohs Compliant: Yes |Ixys Semiconductor IXFN132N50P3 RoHS: Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$30.3400 | Buy Now |
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DISTI #
747-IXFN132N50P3
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Mouser Electronics | MOSFET Modules 500V 112A 0.039Ohm PolarP3 Power MOSFET RoHS: Compliant | 5 |
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$29.0800 / $38.0900 | Buy Now |
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Future Electronics | Single N-Channel 500 V 1500 W 267 nC Chassis Mount Power Mosfet - SOT227 RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tube | 20Tube |
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$28.3800 / $29.1700 | Buy Now |
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Future Electronics | Single N-Channel 500 V 1500 W 267 nC Chassis Mount Power Mosfet - SOT227 RoHS: Compliant pbFree: Yes Min Qty: 10 Package Multiple: 10 Container: Tube | 0Tube |
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$32.2300 / $33.1400 | Buy Now |
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DISTI #
IXFN132N50P3
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TTI | MOSFET Modules 500V 112A 0.039Ohm PolarP3 Power MOSFET Min Qty: 300 Package Multiple: 10 Container: Tube | Americas - 0 |
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$28.9400 | Buy Now |
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DISTI #
IXFN132N50P3
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TME | Module, single transistor, 500V, 112A, SOT227B, screw, Idm: 330A Min Qty: 1 | 0 |
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$31.8400 / $38.7200 | RFQ |
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LCSC | 500V 112A 1.5kW 39m66A10V 5V8mA 1 N-Channel SOT-227B MOSFETs ROHS | 22 |
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$25.1412 / $26.5510 | Buy Now |
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New Advantage Corporation | Single N-Channel 500 V 1500 W 267 nC Chassis Mount Power Mosfet - SOT227 RoHS: Compliant Min Qty: 1 Package Multiple: 10 | 20 |
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$37.8300 / $40.5300 | Buy Now |
Part Details for IXFN132N50P3
IXFN132N50P3 CAD Models
IXFN132N50P3 Part Data Attributes
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IXFN132N50P3
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFN132N50P3
IXYS Corporation
Power Field-Effect Transistor, 112A I(D), 500V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | MINIBLOC-4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 3000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 112 A | |
| Drain-source On Resistance-Max | 0.039 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PUFM-X4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1500 W | |
| Pulsed Drain Current-Max (IDM) | 330 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFN132N50P3
This table gives cross-reference parts and alternative options found for IXFN132N50P3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN132N50P3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT100M50J | Power Field-Effect Transistor, 103A I(D), 500V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOTOP-4 | Microsemi Corporation | IXFN132N50P3 vs APT100M50J |
| IXFN132N50P3 | Power Field-Effect Transistor, | Littelfuse Inc | IXFN132N50P3 vs IXFN132N50P3 |
| APT100M50J | Power Field-Effect Transistor, 103A I(D), 500V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFN132N50P3 vs APT100M50J |