Part Details for IXFN102N30P by IXYS Corporation
Overview of IXFN102N30P by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Consumer Electronics
Energy and Power Systems
Renewable Energy
Price & Stock for IXFN102N30P
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXFN102N30P
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Mouser Electronics | Discrete Semiconductor Modules 102 Amps 300V 0.033 Rds RoHS: Compliant | 0 |
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$25.0000 | Order Now |
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Future Electronics | Single N-Channel 500 Vds 33 mOhm 600 W Power Mosfet - SOT-227B RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 10 Container: Tube | 0Tube |
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$21.4300 / $22.0700 | Buy Now |
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Future Electronics | Single N-Channel 500 Vds 33 mOhm 600 W Power Mosfet - SOT-227B RoHS: Compliant pbFree: Yes Min Qty: 200 Package Multiple: 200 Container: Tube | 0Tube |
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$21.4300 | Buy Now |
DISTI #
IXFN102N30P
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TTI | Discrete Semiconductor Modules 102 Amps 300V 0.033 Rds Min Qty: 300 Package Multiple: 10 Container: Tube | Americas - 0 |
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$18.0300 | Buy Now |
DISTI #
IXFN102N30P
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TME | Module, single transistor, 300V, 86A, SOT227B, screw, Idm: 250A Min Qty: 1 | 0 |
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$25.3900 / $31.9000 | RFQ |
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New Advantage Corporation | MOSFET MOD.88A 300V N-CH SOT227B HIPERFET RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 150 |
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$42.9100 / $45.9800 | Buy Now |
Part Details for IXFN102N30P
IXFN102N30P CAD Models
IXFN102N30P Part Data Attributes:
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IXFN102N30P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFN102N30P
IXYS Corporation
Power Field-Effect Transistor, 88A I(D), 300V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | IXYS CORP | |
Package Description | PLASTIC, MINIBLOC-4 | |
Pin Count | 4 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Additional Feature | AVALANCHE RATED | |
Avalanche Energy Rating (Eas) | 5000 mJ | |
Case Connection | ISOLATED | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 300 V | |
Drain Current-Max (ID) | 88 A | |
Drain-source On Resistance-Max | 0.033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PUFM-X4 | |
Number of Elements | 1 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 250 A | |
Qualification Status | Not Qualified | |
Reference Standard | UL RECOGNIZED | |
Surface Mount | NO | |
Terminal Finish | NICKEL | |
Terminal Form | UNSPECIFIED | |
Terminal Position | UPPER | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |