Datasheets
IXFN102N30P by:

Power Field-Effect Transistor, 88A I(D), 300V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4

Part Details for IXFN102N30P by IXYS Corporation

Overview of IXFN102N30P by IXYS Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXFN102N30P

Part # Distributor Description Stock Price Buy
DISTI # 747-IXFN102N30P
Mouser Electronics Discrete Semiconductor Modules 102 Amps 300V 0.033 Rds RoHS: Compliant 0
  • 300 $25.0000
$25.0000 Order Now
Future Electronics Single N-Channel 500 Vds 33 mOhm 600 W Power Mosfet - SOT-227B RoHS: Compliant pbFree: Yes Min Qty: 300 Package Multiple: 10 Container: Tube 0
Tube
  • 10 $22.0700
  • 30 $21.8600
  • 50 $21.7700
  • 100 $21.6400
  • 200 $21.4300
$21.4300 / $22.0700 Buy Now
Future Electronics Single N-Channel 500 Vds 33 mOhm 600 W Power Mosfet - SOT-227B RoHS: Compliant pbFree: Yes Min Qty: 200 Package Multiple: 200 Container: Tube 0
Tube
  • 200 $21.4300
$21.4300 Buy Now
DISTI # IXFN102N30P
TTI Discrete Semiconductor Modules 102 Amps 300V 0.033 Rds Min Qty: 300 Package Multiple: 10 Container: Tube Americas - 0
  • 300 $18.0300
$18.0300 Buy Now
DISTI # IXFN102N30P
TME Module, single transistor, 300V, 86A, SOT227B, screw, Idm: 250A Min Qty: 1 0
  • 1 $31.9000
  • 3 $28.7500
  • 10 $25.3900
$25.3900 / $31.9000 RFQ
New Advantage Corporation MOSFET MOD.88A 300V N-CH SOT227B HIPERFET RoHS: Compliant Min Qty: 1 Package Multiple: 100 150
  • 100 $45.9800
  • 150 $42.9100
$42.9100 / $45.9800 Buy Now

Part Details for IXFN102N30P

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IXFN102N30P Part Data Attributes:

IXFN102N30P IXYS Corporation
Buy Now Datasheet
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IXFN102N30P IXYS Corporation Power Field-Effect Transistor, 88A I(D), 300V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer IXYS CORP
Package Description PLASTIC, MINIBLOC-4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 5000 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 300 V
Drain Current-Max (ID) 88 A
Drain-source On Resistance-Max 0.033 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 250 A
Qualification Status Not Qualified
Reference Standard UL RECOGNIZED
Surface Mount NO
Terminal Finish NICKEL
Terminal Form UNSPECIFIED
Terminal Position UPPER
Transistor Application SWITCHING
Transistor Element Material SILICON

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