Datasheets
IXFN100N10S1 by: IXYS Corporation

Power Field-Effect Transistor, 100A I(D), 100V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4

Part Details for IXFN100N10S1 by IXYS Corporation

Overview of IXFN100N10S1 by IXYS Corporation

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Part Details for IXFN100N10S1

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IXFN100N10S1 Part Data Attributes

IXFN100N10S1 IXYS Corporation
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IXFN100N10S1 IXYS Corporation Power Field-Effect Transistor, 100A I(D), 100V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer IXYS CORP
Package Description FLANGE MOUNT, R-PUFM-X4
Pin Count 4
Reach Compliance Code compliant
ECCN Code EAR99
Additional Feature AVALANCHE RATED
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.0125 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PUFM-X4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 400 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Form UNSPECIFIED
Terminal Position UPPER
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFN100N10S1

This table gives cross-reference parts and alternative options found for IXFN100N10S1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFN100N10S1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFN44N60 Power Field-Effect Transistor, Littelfuse Inc IXFN100N10S1 vs IXFN44N60
BUK482-60A TRANSISTOR 2.7 A, 60 V, 0.13 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors IXFN100N10S1 vs BUK482-60A
BUK417-500BE TRANSISTOR 28 A, 500 V, 0.16 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power NXP Semiconductors IXFN100N10S1 vs BUK417-500BE
IXFK44N50F Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3 IXYS Corporation IXFN100N10S1 vs IXFK44N50F
IXFN44N50 Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 Littelfuse Inc IXFN100N10S1 vs IXFN44N50
IXFN80N50Q3 Power Field-Effect Transistor, Littelfuse Inc IXFN100N10S1 vs IXFN80N50Q3
IXFN64N50PD2 Power Field-Effect Transistor, 50A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 Littelfuse Inc IXFN100N10S1 vs IXFN64N50PD2
APT40M75JN 56A, 400V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 Microsemi Corporation IXFN100N10S1 vs APT40M75JN
IXFE48N50Q Power Field-Effect Transistor, 41A I(D), 500V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN IXYS Corporation IXFN100N10S1 vs IXFE48N50Q
IXFX44N50F Power Field-Effect Transistor, 44A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, PLUS247, 3 PIN IXYS Corporation IXFN100N10S1 vs IXFX44N50F

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