Part Details for IXFL82N60P by IXYS Corporation
Overview of IXFL82N60P by IXYS Corporation
- Distributor Offerings: (6 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (6 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for IXFL82N60P
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
747-IXFL82N60P
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Mouser Electronics | MOSFET 82 Amps 600V 0.78 Ohm Rds RoHS: Compliant | 0 |
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$21.1500 | Order Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 25 Package Multiple: 25 Lead time: 26 Weeks Container: Tube | 0Tube |
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$24.7800 | Buy Now |
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Quest Components | 12 |
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$37.6656 / $39.6480 | Buy Now | |
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DISTI #
IXFL82N60P
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TTI | MOSFET 82 Amps 600V 0.78 Ohm Rds Min Qty: 300 Package Multiple: 25 Container: Tube | Americas - 0 |
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$21.1400 | Buy Now |
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DISTI #
IXFL82N60P
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TME | Transistor: N-MOSFET, unipolar, 600V, 55A, 625W, ISOPLUS264™ Min Qty: 1 | 20 |
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$24.9100 / $33.6100 | Buy Now |
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New Advantage Corporation | MOSFET DIS.82A 600V N-CH ISOPLUS264-3 POLARHV THT RoHS: Compliant Min Qty: 1 Package Multiple: 100 | 1026 |
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$30.2300 / $32.3900 | Buy Now |
Part Details for IXFL82N60P
IXFL82N60P CAD Models
IXFL82N60P Part Data Attributes
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IXFL82N60P
IXYS Corporation
Buy Now
Datasheet
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Compare Parts:
IXFL82N60P
IXYS Corporation
Power Field-Effect Transistor, 55A I(D), 600V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS264, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | IXYS CORP | |
| Package Description | ISOPLUS264, 3 PIN | |
| Pin Count | 3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 5000 mJ | |
| Case Connection | ISOLATED | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 55 A | |
| Drain-source On Resistance-Max | 0.078 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 200 A | |
| Qualification Status | Not Qualified | |
| Reference Standard | UL RECOGNIZED | |
| Surface Mount | NO | |
| Terminal Finish | TIN SILVER COPPER | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for IXFL82N60P
This table gives cross-reference parts and alternative options found for IXFL82N60P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFL82N60P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APT60M75JLL | Power Field-Effect Transistor, 58A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFL82N60P vs APT60M75JLL |
| APT60M75PVR | Power Field-Effect Transistor, 60.5A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOLATED PPACK-4 | Advanced Power Technology | IXFL82N60P vs APT60M75PVR |
| IXFL82N60P | Power Field-Effect Transistor, 55A I(D), 600V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS264, 3 PIN | Littelfuse Inc | IXFL82N60P vs IXFL82N60P |
| APT60M75JFLL | Power Field-Effect Transistor, 58A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFL82N60P vs APT60M75JFLL |
| APT60M75JVR | Power Field-Effect Transistor, 62A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Microchip Technology Inc | IXFL82N60P vs APT60M75JVR |
| IXFL60N60 | Power Field-Effect Transistor, 60A I(D), 600V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS-264,3 PIN | IXYS Corporation | IXFL82N60P vs IXFL60N60 |