Datasheets
IXFK44N55Q by:

Power Field-Effect Transistor, 44A I(D), 550V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3

Part Details for IXFK44N55Q by Littelfuse Inc

Overview of IXFK44N55Q by Littelfuse Inc

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Part Details for IXFK44N55Q

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IXFK44N55Q Part Data Attributes

IXFK44N55Q Littelfuse Inc
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IXFK44N55Q Littelfuse Inc Power Field-Effect Transistor, 44A I(D), 550V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, PLASTIC PACKAGE-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer LITTELFUSE INC
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 2500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 550 V
Drain Current-Max (ID) 44 A
Drain-source On Resistance-Max 0.12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-264AA
JESD-30 Code R-PSFM-T3
JESD-609 Code e1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 176 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFK44N55Q

This table gives cross-reference parts and alternative options found for IXFK44N55Q. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFK44N55Q, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
APT40M75JN Power Field-Effect Transistor, 56A I(D), 400V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOTOP-4 Advanced Power Technology IXFK44N55Q vs APT40M75JN
IXFN100N10S1 Power Field-Effect Transistor, 100A I(D), 100V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation IXFK44N55Q vs IXFN100N10S1
APT50M60JN 71A, 500V, 0.06ohm, N-CHANNEL, Si, POWER, MOSFET, ISOTOP-4 Microsemi Corporation IXFK44N55Q vs APT50M60JN
IXFN50N50 Power Field-Effect Transistor, 50A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 Littelfuse Inc IXFK44N55Q vs IXFN50N50
IXFN80N50Q2 Power Field-Effect Transistor, 80A I(D), 500V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC, 4 PIN IXYS Corporation IXFK44N55Q vs IXFN80N50Q2
IXFN100N20 Power Field-Effect Transistor, 100A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, MINIBLOC-4 Littelfuse Inc IXFK44N55Q vs IXFN100N20
IXTN36N50 Power Field-Effect Transistor, 36A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-227B, MINIBLOC-4 IXYS Corporation IXFK44N55Q vs IXTN36N50
APT5012LNR Power Field-Effect Transistor, 42A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264AA, 3 PIN Advanced Power Technology IXFK44N55Q vs APT5012LNR
IXFN48N50U2 Power Field-Effect Transistor, 48A I(D), 500V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MINIBLOC-4 IXYS Corporation IXFK44N55Q vs IXFN48N50U2
IXFE44N50QD3 Power Field-Effect Transistor, 39A I(D), 500V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOPLUS227, 4 PIN IXYS Corporation IXFK44N55Q vs IXFE44N50QD3

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