Datasheets
IXFH70N20Q3 by:

Power Field-Effect Transistor,

Part Details for IXFH70N20Q3 by Littelfuse Inc

Overview of IXFH70N20Q3 by Littelfuse Inc

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for IXFH70N20Q3

Part # Distributor Description Stock Price Buy
DISTI # 03AH0610
Newark Discmsft Nchhiperfet-Q3 Class To-247Ad/ Tube |Littelfuse IXFH70N20Q3 Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $8.6800
  • 500 $8.0700
$8.0700 / $8.6800 Buy Now
DISTI # IXFH70N20Q3-ND
DigiKey MOSFET N-CH 200V 70A TO247AD Min Qty: 1 Lead time: 44 Weeks Container: Tube Temporarily Out of Stock
  • 1 $13.0500
  • 30 $10.5667
  • 120 $9.9450
  • 510 $9.0127
  • 1,020 $8.2668
$8.2668 / $13.0500 Buy Now
Future Electronics MOSFET DISCRETE RoHS: Compliant pbFree: Yes Min Qty: 30 Package Multiple: 30 Container: Tube 210
Tube
  • 30 $7.5100
  • 60 $7.4600
  • 90 $7.4400
  • 120 $7.4200
  • 150 $7.3600
$7.3600 / $7.5100 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 30 180
  • 30 $10.5100
  • 180 $9.8100
$9.8100 / $10.5100 Buy Now

Part Details for IXFH70N20Q3

IXFH70N20Q3 CAD Models

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IXFH70N20Q3 Part Data Attributes:

IXFH70N20Q3 Littelfuse Inc
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IXFH70N20Q3 Littelfuse Inc Power Field-Effect Transistor,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1500 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 70 A
Drain-source On Resistance-Max 0.04 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 100 pF
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 690 W
Pulsed Drain Current-Max (IDM) 210 A
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFH70N20Q3

This table gives cross-reference parts and alternative options found for IXFH70N20Q3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH70N20Q3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IXFT70N20Q3 Power Field-Effect Transistor, 70A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN IXYS Corporation IXFH70N20Q3 vs IXFT70N20Q3

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