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Transistors / Power Field-Effect Transistors / IXFH44N50P
Datasheets
IXFH44N50P by:
Littelfuse Inc
IXYS Corporation
IXYS Integrated Circuits Division
Littelfuse Inc
Not Found

Power Field-Effect Transistor, 44A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN

Part Details for IXFH44N50P by Littelfuse Inc

Results Overview of IXFH44N50P by Littelfuse Inc

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

IXFH44N50P Information

IXFH44N50P by Littelfuse Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for IXFH44N50P

Part # Distributor Description Stock Price Buy
DISTI # 03AH0590
Newark Discmosfetn-Ch Hiperfet-Polar To-247Ad/ Tube |Littelfuse IXFH44N50P RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk 0
  • 250 $7.5800
  • 500 $7.0500
$7.0500 / $7.5800 Buy Now
DISTI # IXFH44N50P-ND
DigiKey MOSFET N-CH 500V 44A TO247AD Min Qty: 1 Lead time: 35 Weeks Container: Tube Temporarily Out of Stock
  • 1 $12.0300
  • 30 $7.8947
  • 120 $6.9520
  • 510 $6.7188
$6.7188 / $12.0300 Buy Now
DISTI # 75577920
RS DiscMosfetN-CH HiPerFET-Polar TO-247AD | Littelfuse IXFH44N50P Min Qty: 30 Package Multiple: 1 Lead time: 8 Weeks, 0 Days Container: Bulk 0
  • 30 $10.3900
$10.3900 RFQ

Part Details for IXFH44N50P

IXFH44N50P CAD Models

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IXFH44N50P Part Data Attributes

Parametric Data
IXFH44N50P Littelfuse Inc
Buy Now Datasheet
Compare Parts:
IXFH44N50P Littelfuse Inc Power Field-Effect Transistor, 44A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN
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Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer LITTELFUSE INC
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer LITTELFUSE
Additional Feature AVALANCHE RATED
Avalanche Energy Rating (Eas) 1700 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 500 V
Drain Current-Max (ID) 44 A
Drain-source On Resistance-Max 0.14 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-247AD
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 110 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn)
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for IXFH44N50P

This table gives cross-reference parts and alternative options found for IXFH44N50P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of IXFH44N50P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
IXFH44N50Q3 Littelfuse Inc $16.5254 Power Field-Effect Transistor, IXFH44N50P vs IXFH44N50Q3
IXFT44N50P IXYS Corporation $5.3142 Power Field-Effect Transistor, 44A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXFH44N50P vs IXFT44N50P
IXTQ44N50P IXYS Corporation $4.9557 Power Field-Effect Transistor, 44A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN IXFH44N50P vs IXTQ44N50P
IXFK44N50P Littelfuse Inc Check for Price Power Field-Effect Transistor, 44A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN IXFH44N50P vs IXFK44N50P
IXFT44N50P Littelfuse Inc $9.6637 Power Field-Effect Transistor, 44A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, TO-268, 3 PIN IXFH44N50P vs IXFT44N50P
IXFT44N50Q3 IXYS Corporation $10.1665 Power Field-Effect Transistor, 44A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN IXFH44N50P vs IXFT44N50Q3
IXFT44N50Q3 Littelfuse Inc $18.2634 Power Field-Effect Transistor, IXFH44N50P vs IXFT44N50Q3
IXFH44N50Q3 IXYS Corporation $13.5325 Power Field-Effect Transistor, 44A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 IXFH44N50P vs IXFH44N50Q3
IXFK44N50P IXYS Corporation $8.1621 Power Field-Effect Transistor, 44A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA, TO-264, 3 PIN IXFH44N50P vs IXFK44N50P
IXFH44N50P IXYS Corporation $7.3843 Power Field-Effect Transistor, 44A I(D), 500V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN IXFH44N50P vs IXFH44N50P

IXFH44N50P Related Parts

IXFH44N50P Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for IXFH44N50P is a standard SOT-227 package footprint with a minimum pad size of 3.5mm x 2.5mm and a thermal pad size of 2.5mm x 2.5mm.

  • Yes, IXFH44N50P is rated for operation up to 150°C, but it's recommended to derate the current and voltage ratings according to the temperature derating curve provided in the datasheet.

  • To ensure reliability, follow proper PCB design and layout guidelines, use a suitable thermal interface material, and ensure that the device is operated within its recommended operating conditions and ratings.

  • Yes, IXFH44N50P is suitable for high-frequency switching applications up to 100 kHz, but it's recommended to evaluate the device's performance and losses using simulation tools and/or prototype testing.

  • The recommended gate drive voltage for IXFH44N50P is 10-15V, but it's recommended to consult the datasheet and application notes for specific gate drive requirements and recommendations.