Part Details for IXFH220N06T3 by Littelfuse Inc
Overview of IXFH220N06T3 by Littelfuse Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Automotive
Price & Stock for IXFH220N06T3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
03AH0559
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Newark | Disc Msft Nchtrenchgate-Gen3 To-247Ad/Tube |Littelfuse IXFH220N06T3 RoHS: Not Compliant Min Qty: 300 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Part Details for IXFH220N06T3
IXFH220N06T3 CAD Models
IXFH220N06T3 Part Data Attributes
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IXFH220N06T3
Littelfuse Inc
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Datasheet
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IXFH220N06T3
Littelfuse Inc
Power Field-Effect Transistor,
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | LITTELFUSE INC | |
| Package Description | , | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | LITTELFUSE | |
| Samacsys Modified On | 2021-08-02 22:22:48 | |
| Category CO2 Kg | 8.8 | |
| Compliance Temperature Grade | Military: -55C to +175C | |
| Conflict Mineral Status | DRC Conflict Free Undeterminable | |
| Conflict Mineral Status Source | CMRT V6.10 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 900 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 220 A | |
| Drain-source On Resistance-Max | 0.004 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 50 pF | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 440 W | |
| Pulsed Drain Current-Max (IDM) | 500 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |